Memristive Characteristic of an Amorphous Ga-Sn-O Thin-Film Device with Double Layers of Different Oxygen Density

Memristive Characteristic of an Amorphous Ga-Sn-O Thin-Film Device with Double Layers of Different Oxygen Density

We have found a memristive characteristic of an amorphous Ga-Sn-O (α-GTO) thin-film device with double layers of different oxygen density. The double layers are deposited using radio frequency (RF) magnetron sputtering, whose gas for the lower layer contains less oxygen, whereas that for th...

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Bibliographic Details
Main Authors: Ayata Kurasaki, Ryo Tanaka, Sumio Sugisaki, Tokiyoshi Matsuda, Daichi Koretomo, Yusaku Magari, Mamoru Furuta, Mutsumi Kimura
Format: Article
Language:English
Published: MDPI AG 2019-10-01
Series:Materials
Subjects:
memristive characteristic
amorphous ga-sn-o (α-gto)
thin-film device
oxygen density
Online Access:https://www.mdpi.com/1996-1944/12/19/3236

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