Memristive Characteristic of an Amorphous Ga-Sn-O Thin-Film Device with Double Layers of Different Oxygen Density

Memristive Characteristic of an Amorphous Ga-Sn-O Thin-Film Device with Double Layers of Different Oxygen Density

We have found a memristive characteristic of an amorphous Ga-Sn-O (α-GTO) thin-film device with double layers of different oxygen density. The double layers are deposited using radio frequency (RF) magnetron sputtering, whose gas for the lower layer contains less oxygen, whereas that for th...

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Main Authors: Ayata Kurasaki, Ryo Tanaka, Sumio Sugisaki, Tokiyoshi Matsuda, Daichi Koretomo, Yusaku Magari, Mamoru Furuta, Mutsumi Kimura
Format: Article
Language:English
Published: MDPI AG 2019-10-01
Series:Materials
Subjects:
memristive characteristic
amorphous ga-sn-o (α-gto)
thin-film device
oxygen density
Online Access:https://www.mdpi.com/1996-1944/12/19/3236
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spelling doaj-1861c9a39bb84cb980736c800ef8638d2020-11-25T01:56:43ZengMDPI AGMaterials1996-19442019-10-011219323610.3390/ma12193236ma12193236Memristive Characteristic of an Amorphous Ga-Sn-O Thin-Film Device with Double Layers of Different Oxygen DensityAyata Kurasaki0Ryo Tanaka1Sumio Sugisaki2Tokiyoshi Matsuda3Daichi Koretomo4Yusaku Magari5Mamoru Furuta6Mutsumi Kimura7Department of Electronics and Informatics, Faculty of Science and Technology, Ryukoku University, Seta, Otsu 520-2194, JapanDepartment of Electronics and Informatics, Faculty of Science and Technology, Ryukoku University, Seta, Otsu 520-2194, JapanDepartment of Electronics and Informatics, Faculty of Science and Technology, Ryukoku University, Seta, Otsu 520-2194, JapanInnovative Materials and Processing Research Center, High-Tech Research Center, Ryukoku University, Seta, Otsu 520-2194, JapanSchool of Environmental Science and Engineering, Graduate School of Engineering, Kochi University of Technology, Kami, Kochi 782-8502, JapanSchool of Environmental Science and Engineering, Graduate School of Engineering, Kochi University of Technology, Kami, Kochi 782-8502, JapanSchool of Environmental Science and Engineering, Graduate School of Engineering, Kochi University of Technology, Kami, Kochi 782-8502, JapanDepartment of Electronics and Informatics, Faculty of Science and Technology, Ryukoku University, Seta, Otsu 520-2194, JapanWe have found a memristive characteristic of an amorphous Ga-Sn-O (α-GTO) thin-film device with double layers of different oxygen density. The double layers are deposited using radio frequency (RF) magnetron sputtering, whose gas for the lower layer contains less oxygen, whereas that for the upper layer contains more oxygen, and it is assumed that the former contains more oxygen vacancies, whereas the latter contains fewer vacancies. The characteristic is explained by drift of oxygen and is stable without forming operation because additional structures such as filament are unnecessary. The fabrication is easy because the double layers are successively deposited simply by changing the oxygen ratio in the chamber.https://www.mdpi.com/1996-1944/12/19/3236memristive characteristicamorphous ga-sn-o (α-gto)thin-film deviceoxygen density
collection DOAJ
language English
format Article
sources DOAJ
author Ayata Kurasaki
Ryo Tanaka
Sumio Sugisaki
Tokiyoshi Matsuda
Daichi Koretomo
Yusaku Magari
Mamoru Furuta
Mutsumi Kimura
spellingShingle Ayata Kurasaki
Ryo Tanaka
Sumio Sugisaki
Tokiyoshi Matsuda
Daichi Koretomo
Yusaku Magari
Mamoru Furuta
Mutsumi Kimura
Memristive Characteristic of an Amorphous Ga-Sn-O Thin-Film Device with Double Layers of Different Oxygen Density
Materials
memristive characteristic
amorphous ga-sn-o (α-gto)
thin-film device
oxygen density
author_facet Ayata Kurasaki
Ryo Tanaka
Sumio Sugisaki
Tokiyoshi Matsuda
Daichi Koretomo
Yusaku Magari
Mamoru Furuta
Mutsumi Kimura
author_sort Ayata Kurasaki
title Memristive Characteristic of an Amorphous Ga-Sn-O Thin-Film Device with Double Layers of Different Oxygen Density
title_short Memristive Characteristic of an Amorphous Ga-Sn-O Thin-Film Device with Double Layers of Different Oxygen Density
title_full Memristive Characteristic of an Amorphous Ga-Sn-O Thin-Film Device with Double Layers of Different Oxygen Density
title_fullStr Memristive Characteristic of an Amorphous Ga-Sn-O Thin-Film Device with Double Layers of Different Oxygen Density
title_full_unstemmed Memristive Characteristic of an Amorphous Ga-Sn-O Thin-Film Device with Double Layers of Different Oxygen Density
title_sort memristive characteristic of an amorphous ga-sn-o thin-film device with double layers of different oxygen density
publisher MDPI AG
series Materials
issn 1996-1944
publishDate 2019-10-01
description We have found a memristive characteristic of an amorphous Ga-Sn-O (α-GTO) thin-film device with double layers of different oxygen density. The double layers are deposited using radio frequency (RF) magnetron sputtering, whose gas for the lower layer contains less oxygen, whereas that for the upper layer contains more oxygen, and it is assumed that the former contains more oxygen vacancies, whereas the latter contains fewer vacancies. The characteristic is explained by drift of oxygen and is stable without forming operation because additional structures such as filament are unnecessary. The fabrication is easy because the double layers are successively deposited simply by changing the oxygen ratio in the chamber.
topic memristive characteristic
amorphous ga-sn-o (α-gto)
thin-film device
oxygen density
url https://www.mdpi.com/1996-1944/12/19/3236
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AT ryotanaka memristivecharacteristicofanamorphousgasnothinfilmdevicewithdoublelayersofdifferentoxygendensity
AT sumiosugisaki memristivecharacteristicofanamorphousgasnothinfilmdevicewithdoublelayersofdifferentoxygendensity
AT tokiyoshimatsuda memristivecharacteristicofanamorphousgasnothinfilmdevicewithdoublelayersofdifferentoxygendensity
AT daichikoretomo memristivecharacteristicofanamorphousgasnothinfilmdevicewithdoublelayersofdifferentoxygendensity
AT yusakumagari memristivecharacteristicofanamorphousgasnothinfilmdevicewithdoublelayersofdifferentoxygendensity
AT mamorufuruta memristivecharacteristicofanamorphousgasnothinfilmdevicewithdoublelayersofdifferentoxygendensity
AT mutsumikimura memristivecharacteristicofanamorphousgasnothinfilmdevicewithdoublelayersofdifferentoxygendensity
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