The algorithmic programs for optimal growth conditions selection in growing of GaAs-based epitaxial layers by MOCVD.

The algorithmic programs for optimal growth conditions selection in growing of GaAs-based epitaxial layers by MOCVD.

The algorithm was worked out, witch allows to define obtained GaAs-based layers characteristics and the most significant epitaxy process technological parameters on the base of half-empiric dependences, if MOCVD process carriage conditions are known.

Bibliographic Details
Main Authors: A. A. Marmalyuk, D. E. Arbenin, E. V. Burlyaeva
Format: Article
Language:Russian
Published: MIREA - Russian Technological University 2009-04-01
Series:Тонкие химические технологии
Subjects:
algorithm
epitaxy
imitation
mocvd
simulator
Online Access:https://www.finechem-mirea.ru/jour/article/view/1105

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