The algorithmic programs for optimal growth conditions selection in growing of GaAs-based epitaxial layers by MOCVD.

The algorithmic programs for optimal growth conditions selection in growing of GaAs-based epitaxial layers by MOCVD.

The algorithm was worked out, witch allows to define obtained GaAs-based layers characteristics and the most significant epitaxy process technological parameters on the base of half-empiric dependences, if MOCVD process carriage conditions are known.

Bibliographic Details
Main Authors: A. A. Marmalyuk, D. E. Arbenin, E. V. Burlyaeva
Format: Article
Language:Russian
Published: MIREA - Russian Technological University 2009-04-01
Series:Тонкие химические технологии
Subjects:
algorithm
epitaxy
imitation
mocvd
simulator
Online Access:https://www.finechem-mirea.ru/jour/article/view/1105
id doaj-184953b438d24561b79cdbf28732d62f
record_format Article
spelling doaj-184953b438d24561b79cdbf28732d62f2021-07-28T13:23:52ZrusMIREA - Russian Technological UniversityТонкие химические технологии2410-65932686-75752009-04-014261661099The algorithmic programs for optimal growth conditions selection in growing of GaAs-based epitaxial layers by MOCVD.A. A. Marmalyuk0D. E. Arbenin1E. V. Burlyaeva2ООО «Сигм Плюс», МоскваM.V. Lomonosov Moscow State University of Fine Chemical Technologies, 86, Vernadskogo pr., Moscow 119571M.V. Lomonosov Moscow State University of Fine Chemical Technologies, 86, Vernadskogo pr., Moscow 119571The algorithm was worked out, witch allows to define obtained GaAs-based layers characteristics and the most significant epitaxy process technological parameters on the base of half-empiric dependences, if MOCVD process carriage conditions are known.https://www.finechem-mirea.ru/jour/article/view/1105algorithmepitaxyimitationmocvdsimulator
collection DOAJ
language Russian
format Article
sources DOAJ
author A. A. Marmalyuk
D. E. Arbenin
E. V. Burlyaeva
spellingShingle A. A. Marmalyuk
D. E. Arbenin
E. V. Burlyaeva
The algorithmic programs for optimal growth conditions selection in growing of GaAs-based epitaxial layers by MOCVD.
Тонкие химические технологии
algorithm
epitaxy
imitation
mocvd
simulator
author_facet A. A. Marmalyuk
D. E. Arbenin
E. V. Burlyaeva
author_sort A. A. Marmalyuk
title The algorithmic programs for optimal growth conditions selection in growing of GaAs-based epitaxial layers by MOCVD.
title_short The algorithmic programs for optimal growth conditions selection in growing of GaAs-based epitaxial layers by MOCVD.
title_full The algorithmic programs for optimal growth conditions selection in growing of GaAs-based epitaxial layers by MOCVD.
title_fullStr The algorithmic programs for optimal growth conditions selection in growing of GaAs-based epitaxial layers by MOCVD.
title_full_unstemmed The algorithmic programs for optimal growth conditions selection in growing of GaAs-based epitaxial layers by MOCVD.
title_sort algorithmic programs for optimal growth conditions selection in growing of gaas-based epitaxial layers by mocvd.
publisher MIREA - Russian Technological University
series Тонкие химические технологии
issn 2410-6593
2686-7575
publishDate 2009-04-01
description The algorithm was worked out, witch allows to define obtained GaAs-based layers characteristics and the most significant epitaxy process technological parameters on the base of half-empiric dependences, if MOCVD process carriage conditions are known.
topic algorithm
epitaxy
imitation
mocvd
simulator
url https://www.finechem-mirea.ru/jour/article/view/1105
work_keys_str_mv AT aamarmalyuk thealgorithmicprogramsforoptimalgrowthconditionsselectioningrowingofgaasbasedepitaxiallayersbymocvd
AT dearbenin thealgorithmicprogramsforoptimalgrowthconditionsselectioningrowingofgaasbasedepitaxiallayersbymocvd
AT evburlyaeva thealgorithmicprogramsforoptimalgrowthconditionsselectioningrowingofgaasbasedepitaxiallayersbymocvd
AT aamarmalyuk algorithmicprogramsforoptimalgrowthconditionsselectioningrowingofgaasbasedepitaxiallayersbymocvd
AT dearbenin algorithmicprogramsforoptimalgrowthconditionsselectioningrowingofgaasbasedepitaxiallayersbymocvd
AT evburlyaeva algorithmicprogramsforoptimalgrowthconditionsselectioningrowingofgaasbasedepitaxiallayersbymocvd
_version_ 1721275230384553984

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