High-Performance Non-Volatile InGaZnO Based Flash Memory Device Embedded with a Monolayer Au Nanoparticles

High-Performance Non-Volatile InGaZnO Based Flash Memory Device Embedded with a Monolayer Au Nanoparticles

Non-volatile memory (NVM) devices based on three-terminal thin-film transistors (TFTs) have gained extensive interest in memory applications due to their high retained characteristics, good scalability, and high charge storage capacity. Herein, we report a low-temperature (<100 °C) processed top-...

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Bibliographic Details
Main Authors: Muhammad Naqi, Nayoung Kwon, Sung Hyeon Jung, Pavan Pujar, Hae Won Cho, Yong In Cho, Hyung Koun Cho, Byungkwon Lim, Sunkook Kim
Format: Article
Language:English
Published: MDPI AG 2021-04-01
Series:Nanomaterials
Subjects:
non-volatile memory device
flash memory device
three-terminal memory device
IGZO
monolayer Au nanoparticles
Online Access:https://www.mdpi.com/2079-4991/11/5/1101

Internet

https://www.mdpi.com/2079-4991/11/5/1101

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