New methodology for modeling, design and implementation of RF power amplifiers
Abstract This work presents a new methodology for modeling, design and implementation of power amplifiers in different technologies. As result of comparison, a flowchart with a new methodology is proposed which can be useful for the designer to design and implement power amplifiers with low, medium...
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Sociedade Brasileira de Microondas e Optoeletrônica; Sociedade Brasileira de Eletromagnetismo
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Series: | Journal of Microwaves, Optoelectronics and Electromagnetic Applications |
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Online Access: | http://www.scielo.br/scielo.php?script=sci_arttext&pid=S2179-10742017000300785&lng=en&tlng=en |
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doaj-1767f29fa0a049cbafa4d352b13a238b2020-11-25T00:48:32ZengSociedade Brasileira de Microondas e Optoeletrônica; Sociedade Brasileira de EletromagnetismoJournal of Microwaves, Optoelectronics and Electromagnetic Applications2179-107416378580010.1590/2179-10742017v16i3955S2179-10742017000300785New methodology for modeling, design and implementation of RF power amplifiersGuillermo Rafael-ValdiviaOmar Castellanos BallesterosAbstract This work presents a new methodology for modeling, design and implementation of power amplifiers in different technologies. As result of comparison, a flowchart with a new methodology is proposed which can be useful for the designer to design and implement power amplifiers with low, medium and high power devices in different technologies. This paper is divided in 4 parts: The first one is an introduction to the importance of modeling and design techniques in the final implementation of power amplifiers for the modern communication systems. The second one details the modeling process for different technologies, which final result is a unified model. The third part is related with the characterization of high power transistors, with special emphasis on substrate characterization and final implementation of a power amplifier. Finally, in the fourth part, the new methodology is proposed based on the comparisons of previous procedures.http://www.scielo.br/scielo.php?script=sci_arttext&pid=S2179-10742017000300785&lng=en&tlng=enmicrowavesmodelingpower amplifiersubstrate |
collection |
DOAJ |
language |
English |
format |
Article |
sources |
DOAJ |
author |
Guillermo Rafael-Valdivia Omar Castellanos Ballesteros |
spellingShingle |
Guillermo Rafael-Valdivia Omar Castellanos Ballesteros New methodology for modeling, design and implementation of RF power amplifiers Journal of Microwaves, Optoelectronics and Electromagnetic Applications microwaves modeling power amplifier substrate |
author_facet |
Guillermo Rafael-Valdivia Omar Castellanos Ballesteros |
author_sort |
Guillermo Rafael-Valdivia |
title |
New methodology for modeling, design and implementation of RF power amplifiers |
title_short |
New methodology for modeling, design and implementation of RF power amplifiers |
title_full |
New methodology for modeling, design and implementation of RF power amplifiers |
title_fullStr |
New methodology for modeling, design and implementation of RF power amplifiers |
title_full_unstemmed |
New methodology for modeling, design and implementation of RF power amplifiers |
title_sort |
new methodology for modeling, design and implementation of rf power amplifiers |
publisher |
Sociedade Brasileira de Microondas e Optoeletrônica; Sociedade Brasileira de Eletromagnetismo |
series |
Journal of Microwaves, Optoelectronics and Electromagnetic Applications |
issn |
2179-1074 |
description |
Abstract This work presents a new methodology for modeling, design and implementation of power amplifiers in different technologies. As result of comparison, a flowchart with a new methodology is proposed which can be useful for the designer to design and implement power amplifiers with low, medium and high power devices in different technologies. This paper is divided in 4 parts: The first one is an introduction to the importance of modeling and design techniques in the final implementation of power amplifiers for the modern communication systems. The second one details the modeling process for different technologies, which final result is a unified model. The third part is related with the characterization of high power transistors, with special emphasis on substrate characterization and final implementation of a power amplifier. Finally, in the fourth part, the new methodology is proposed based on the comparisons of previous procedures. |
topic |
microwaves modeling power amplifier substrate |
url |
http://www.scielo.br/scielo.php?script=sci_arttext&pid=S2179-10742017000300785&lng=en&tlng=en |
work_keys_str_mv |
AT guillermorafaelvaldivia newmethodologyformodelingdesignandimplementationofrfpoweramplifiers AT omarcastellanosballesteros newmethodologyformodelingdesignandimplementationofrfpoweramplifiers |
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1725255766555754496 |