Composition Related Electrical Active Defect States of InGaAs and GaAsN

Composition Related Electrical Active Defect States of InGaAs and GaAsN

This paper discusses results of electrically active defect states - deep energy level analysis in InGaAs and GaAsN undoped semiconductor structures grown for solar cell applications. Main attention is focused on composition and growth condition dependent impurities and the investigation of their pos...

Full description

Bibliographic Details
Main Authors: Arpad Kosa, Lubica Stuchlikova, Ladislav Harmatha, Jaroslav Kovac, Beata Sciana, Wojciech Dawidowski, Marek Tlaczala
Format: Article
Language:English
Published: VSB-Technical University of Ostrava 2017-01-01
Series:Advances in Electrical and Electronic Engineering
Subjects:
deep energy levels
deep level transient fourier spectroscopy
electrically active defects
gaasn
indium
ingaas
nitrogen
solar cells.
Online Access:http://advances.utc.sk/index.php/AEEE/article/view/2023

Internet

http://advances.utc.sk/index.php/AEEE/article/view/2023

Similar Items