Ultraviolet emission from low resistance Cu2SnS3/SnO2 and CuInS2/Sn:In2O3 nanowires
SnO2 and Sn:In2O3 nanowires were grown on Si(001), and p-n junctions were fabricated in contact with p-type Cu2S which exhibited rectifying current–voltage characteristics. Core-shell Cu2SnS3/SnO2 and CuInS2/Sn:In2O3 nanowires were obtained by depositing copper and post-growth processin...
| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2014-11-01
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| Series: | APL Materials |
| Online Access: | http://dx.doi.org/10.1063/1.4901295 |