Control of plasma profile in microwave discharges via inverse-problem approach

Control of plasma profile in microwave discharges via inverse-problem approach

In the manufacturing process of semiconductors, plasma processing is an essential technology, and the plasma used in the process is required to be of high density, low temperature, large diameter, and high uniformity. This research focuses on the microwave-excited plasma that meets these needs, and...

Full description

Bibliographic Details
Main Authors: Yasuyoshi Yasaka, Naoki Tobita, Akihiro Tsuji
Format: Article
Language:English
Published: AIP Publishing LLC 2013-12-01
Series:AIP Advances
Online Access:http://dx.doi.org/10.1063/1.4840735
id doaj-163e5df4db7a46fbbbfbcf0517f3bbd1
record_format Article
spelling doaj-163e5df4db7a46fbbbfbcf0517f3bbd12020-11-24T21:12:35ZengAIP Publishing LLCAIP Advances2158-32262013-12-01312122102122102-1610.1063/1.4840735002312ADVControl of plasma profile in microwave discharges via inverse-problem approachYasuyoshi Yasaka0Naoki Tobita1Akihiro Tsuji2Department of Electrical and Electronic Engineering, Kobe University, Kobe 657-8501, JapanDepartment of Electrical and Electronic Engineering, Kobe University, Kobe 657-8501, JapanDepartment of Electrical and Electronic Engineering, Kobe University, Kobe 657-8501, JapanIn the manufacturing process of semiconductors, plasma processing is an essential technology, and the plasma used in the process is required to be of high density, low temperature, large diameter, and high uniformity. This research focuses on the microwave-excited plasma that meets these needs, and the research target is a spatial profile control. Two novel techniques are introduced to control the uniformity; one is a segmented slot antenna that can change radial distribution of the radiated field during operation, and the other is a hyper simulator that can predict microwave power distribution necessary for a desired radial density profile. The control system including these techniques provides a method of controlling radial profiles of the microwave plasma via inverse-problem approach, and is investigated numerically and experimentally.http://dx.doi.org/10.1063/1.4840735
collection DOAJ
language English
format Article
sources DOAJ
author Yasuyoshi Yasaka
Naoki Tobita
Akihiro Tsuji
spellingShingle Yasuyoshi Yasaka
Naoki Tobita
Akihiro Tsuji
Control of plasma profile in microwave discharges via inverse-problem approach
AIP Advances
author_facet Yasuyoshi Yasaka
Naoki Tobita
Akihiro Tsuji
author_sort Yasuyoshi Yasaka
title Control of plasma profile in microwave discharges via inverse-problem approach
title_short Control of plasma profile in microwave discharges via inverse-problem approach
title_full Control of plasma profile in microwave discharges via inverse-problem approach
title_fullStr Control of plasma profile in microwave discharges via inverse-problem approach
title_full_unstemmed Control of plasma profile in microwave discharges via inverse-problem approach
title_sort control of plasma profile in microwave discharges via inverse-problem approach
publisher AIP Publishing LLC
series AIP Advances
issn 2158-3226
publishDate 2013-12-01
description In the manufacturing process of semiconductors, plasma processing is an essential technology, and the plasma used in the process is required to be of high density, low temperature, large diameter, and high uniformity. This research focuses on the microwave-excited plasma that meets these needs, and the research target is a spatial profile control. Two novel techniques are introduced to control the uniformity; one is a segmented slot antenna that can change radial distribution of the radiated field during operation, and the other is a hyper simulator that can predict microwave power distribution necessary for a desired radial density profile. The control system including these techniques provides a method of controlling radial profiles of the microwave plasma via inverse-problem approach, and is investigated numerically and experimentally.
url http://dx.doi.org/10.1063/1.4840735
work_keys_str_mv AT yasuyoshiyasaka controlofplasmaprofileinmicrowavedischargesviainverseproblemapproach
AT naokitobita controlofplasmaprofileinmicrowavedischargesviainverseproblemapproach
AT akihirotsuji controlofplasmaprofileinmicrowavedischargesviainverseproblemapproach
_version_ 1716750548335591424

Similar Items