Preparation and luminescent properties of zinc sulfoselenide thin films

The preparation of zinc sulfoselenide heterolayers is considered. The possibility of obtaining a hexagonal modification of the crystal lattice by the method of isovalent substitution was shown. The λ-modulated optical reflection was studied and the parameters of the energy structure of α-ZnSe, α-ZnS...

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Main Authors: M. M. Slyotov, O. M. Slyotov
Format: Article
Language:English
Published: Vasyl Stefanyk Precarpathian National University 2020-01-01
Series:Фізика і хімія твердого тіла
Subjects:
Online Access:http://journals.pu.if.ua/index.php/pcss/article/view/3988
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spelling doaj-161134d07b5e447a9c3c14299025c6b72020-11-25T02:06:22ZengVasyl Stefanyk Precarpathian National UniversityФізика і хімія твердого тіла1729-44282309-85892020-01-0120435435910.15330/pcss.20.4.354-3593417Preparation and luminescent properties of zinc sulfoselenide thin filmsM. M. Slyotov0O. M. Slyotov1Чернівецький національний університет імені Юрія ФедьковичаЧернівецький національний університет імені Юрія ФедьковичаThe preparation of zinc sulfoselenide heterolayers is considered. The possibility of obtaining a hexagonal modification of the crystal lattice by the method of isovalent substitution was shown. The λ-modulated optical reflection was studied and the parameters of the energy structure of α-ZnSe, α-ZnS, α-ZnS<sub>0.45</sub>Se<sub>0.55</sub> were determined. It has been established that the obtained heterolayers are characterized by intense photoluminescence with a quantum yield <em>η</em> = 8–12% in the blue-violet region. It is formed by constituent bands, the nature of which is determined by the annihilation of bound excitons and interband transitions of free charge carriers. It is shown that the selection of temperature regimes allows obtaining radiation with <em>ħω<sub>m</sub></em> maxima in the violet 2.80 eV, blue 2.70 eV and green 2.45 eV spectral regions. It is determined by the generation-recombination transitions involving donor and acceptor states formed by intrinsic point defects of the crystalline lattice V*(Se), V'(Zn) and <em>Zn<sub>i</sub></em>, respectively. The models of radiative recombination are discussed.http://journals.pu.if.ua/index.php/pcss/article/view/3988ізoвоалентні елементиізотермічний відпалгексагональна структурагетерошариенергетична структурафотолюмінесценціяполяризація
collection DOAJ
language English
format Article
sources DOAJ
author M. M. Slyotov
O. M. Slyotov
spellingShingle M. M. Slyotov
O. M. Slyotov
Preparation and luminescent properties of zinc sulfoselenide thin films
Фізика і хімія твердого тіла
ізoвоалентні елементи
ізотермічний відпал
гексагональна структура
гетерошари
енергетична структура
фотолюмінесценція
поляризація
author_facet M. M. Slyotov
O. M. Slyotov
author_sort M. M. Slyotov
title Preparation and luminescent properties of zinc sulfoselenide thin films
title_short Preparation and luminescent properties of zinc sulfoselenide thin films
title_full Preparation and luminescent properties of zinc sulfoselenide thin films
title_fullStr Preparation and luminescent properties of zinc sulfoselenide thin films
title_full_unstemmed Preparation and luminescent properties of zinc sulfoselenide thin films
title_sort preparation and luminescent properties of zinc sulfoselenide thin films
publisher Vasyl Stefanyk Precarpathian National University
series Фізика і хімія твердого тіла
issn 1729-4428
2309-8589
publishDate 2020-01-01
description The preparation of zinc sulfoselenide heterolayers is considered. The possibility of obtaining a hexagonal modification of the crystal lattice by the method of isovalent substitution was shown. The λ-modulated optical reflection was studied and the parameters of the energy structure of α-ZnSe, α-ZnS, α-ZnS<sub>0.45</sub>Se<sub>0.55</sub> were determined. It has been established that the obtained heterolayers are characterized by intense photoluminescence with a quantum yield <em>η</em> = 8–12% in the blue-violet region. It is formed by constituent bands, the nature of which is determined by the annihilation of bound excitons and interband transitions of free charge carriers. It is shown that the selection of temperature regimes allows obtaining radiation with <em>ħω<sub>m</sub></em> maxima in the violet 2.80 eV, blue 2.70 eV and green 2.45 eV spectral regions. It is determined by the generation-recombination transitions involving donor and acceptor states formed by intrinsic point defects of the crystalline lattice V*(Se), V'(Zn) and <em>Zn<sub>i</sub></em>, respectively. The models of radiative recombination are discussed.
topic ізoвоалентні елементи
ізотермічний відпал
гексагональна структура
гетерошари
енергетична структура
фотолюмінесценція
поляризація
url http://journals.pu.if.ua/index.php/pcss/article/view/3988
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