An approximate CNTFET 4:2 compressor based on gate diffusion input and dynamic threshold

An approximate CNTFET 4:2 compressor based on gate diffusion input and dynamic threshold

Abstract Here, a new 4:2 approximate compressor is presented by the gate diffusion input (GDI) technique. Although GDI cells suffer from threshold voltage drop, the dynamic threshold approach and carbon nanotube field‐effect transistors are merged to overcome the mentioned problem. The proposed cell...

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Main Authors: Mahmood Rafiee, Yaqhoub Sadeghi, Nabiollah Shiri, Ayoub Sadeghi
Format: Article
Language:English
Published: Wiley 2021-08-01
Series:Electronics Letters
Online Access:https://doi.org/10.1049/ell2.12221
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spelling doaj-15f864f6546a4af48d0db003e3e1ee1b2021-08-11T03:06:50ZengWileyElectronics Letters0013-51941350-911X2021-08-01571765065210.1049/ell2.12221An approximate CNTFET 4:2 compressor based on gate diffusion input and dynamic thresholdMahmood Rafiee0Yaqhoub Sadeghi1Nabiollah Shiri2Ayoub Sadeghi3Department of Electrical Engineering Shiraz Branch Islamic Azad University Shiraz IranDepartment of Electrical Engineering Qatar University Doha QatarDepartment of Electrical Engineering Shiraz Branch Islamic Azad University Shiraz IranDepartment of Electrical Engineering Shiraz Branch Islamic Azad University Shiraz IranAbstract Here, a new 4:2 approximate compressor is presented by the gate diffusion input (GDI) technique. Although GDI cells suffer from threshold voltage drop, the dynamic threshold approach and carbon nanotube field‐effect transistors are merged to overcome the mentioned problem. The proposed cell has full‐swing outputs, while its error and power delay product are at low rates. Therefore, low voltage multipliers that are used in image processing can benefit from the proposed compressor.https://doi.org/10.1049/ell2.12221
collection DOAJ
language English
format Article
sources DOAJ
author Mahmood Rafiee
Yaqhoub Sadeghi
Nabiollah Shiri
Ayoub Sadeghi
spellingShingle Mahmood Rafiee
Yaqhoub Sadeghi
Nabiollah Shiri
Ayoub Sadeghi
An approximate CNTFET 4:2 compressor based on gate diffusion input and dynamic threshold
Electronics Letters
author_facet Mahmood Rafiee
Yaqhoub Sadeghi
Nabiollah Shiri
Ayoub Sadeghi
author_sort Mahmood Rafiee
title An approximate CNTFET 4:2 compressor based on gate diffusion input and dynamic threshold
title_short An approximate CNTFET 4:2 compressor based on gate diffusion input and dynamic threshold
title_full An approximate CNTFET 4:2 compressor based on gate diffusion input and dynamic threshold
title_fullStr An approximate CNTFET 4:2 compressor based on gate diffusion input and dynamic threshold
title_full_unstemmed An approximate CNTFET 4:2 compressor based on gate diffusion input and dynamic threshold
title_sort approximate cntfet 4:2 compressor based on gate diffusion input and dynamic threshold
publisher Wiley
series Electronics Letters
issn 0013-5194
1350-911X
publishDate 2021-08-01
description Abstract Here, a new 4:2 approximate compressor is presented by the gate diffusion input (GDI) technique. Although GDI cells suffer from threshold voltage drop, the dynamic threshold approach and carbon nanotube field‐effect transistors are merged to overcome the mentioned problem. The proposed cell has full‐swing outputs, while its error and power delay product are at low rates. Therefore, low voltage multipliers that are used in image processing can benefit from the proposed compressor.
url https://doi.org/10.1049/ell2.12221
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