An approximate CNTFET 4:2 compressor based on gate diffusion input and dynamic threshold
Abstract Here, a new 4:2 approximate compressor is presented by the gate diffusion input (GDI) technique. Although GDI cells suffer from threshold voltage drop, the dynamic threshold approach and carbon nanotube field‐effect transistors are merged to overcome the mentioned problem. The proposed cell...
| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Wiley
2021-08-01
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| Series: | Electronics Letters |
| Online Access: | https://doi.org/10.1049/ell2.12221 |
| Summary: | Abstract Here, a new 4:2 approximate compressor is presented by the gate diffusion input (GDI) technique. Although GDI cells suffer from threshold voltage drop, the dynamic threshold approach and carbon nanotube field‐effect transistors are merged to overcome the mentioned problem. The proposed cell has full‐swing outputs, while its error and power delay product are at low rates. Therefore, low voltage multipliers that are used in image processing can benefit from the proposed compressor. |
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| ISSN: | 0013-5194 1350-911X |