Effects of Yttrium Doping on a-IGZO Thin Films for Use as a Channel Layer in Thin-Film Transistors

Effects of Yttrium Doping on a-IGZO Thin Films for Use as a Channel Layer in Thin-Film Transistors

Amorphous In−Ga−Zn−O (a-IGZO) has been studied as a channel layer in thin-film transistors (TFTs). To improve the bias-induced instability of a-IGZO TFTs, we introduced yttrium with high bond enthalpy by magnetron co-sputtering system. The Y-doped a-IGZO (a-IGZO:Y) film...

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Bibliographic Details
Main Authors: Sanghyun Cho, Seohan Kim, Doyeong Kim, Moonsuk Yi, Junseok Byun, Pungkeun Song
Format: Article
Language:English
Published: MDPI AG 2019-01-01
Series:Coatings
Subjects:
TFT channel layer
amorphous transparent conductive oxide semiconductor
magnetron sputtering
change with time
indium−gallium−zinc−oxide
Online Access:http://www.mdpi.com/2079-6412/9/1/44

Internet

http://www.mdpi.com/2079-6412/9/1/44

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