Electrical Hole Transport Properties of an Ambipolar Organic Compound With Zn-Atoms on a Crystalline Silicon Heterostructure

In this paper, we investigate the electrical hole transport properties of an organic/inorganic heterostructure consisting of a thin organic film, that combines hole and electron conducting molecules around a bridging Zn-atom, deposited on top of an n-type crystalline silicon substrate. Current-volta...

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Bibliographic Details
Main Authors: G. Landi, W. R. Fahrner, S. Concilio, L. Sessa, H. C. Neitzert
Format: Article
Language:English
Published: IEEE 2014-01-01
Series:IEEE Journal of the Electron Devices Society
Online Access:https://ieeexplore.ieee.org/document/6874478/