Electrical Hole Transport Properties of an Ambipolar Organic Compound With Zn-Atoms on a Crystalline Silicon Heterostructure

In this paper, we investigate the electrical hole transport properties of an organic/inorganic heterostructure consisting of a thin organic film, that combines hole and electron conducting molecules around a bridging Zn-atom, deposited on top of an n-type crystalline silicon substrate. Current-volta...

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Main Authors: G. Landi, W. R. Fahrner, S. Concilio, L. Sessa, H. C. Neitzert
Format: Article
Language:English
Published: IEEE 2014-01-01
Series:IEEE Journal of the Electron Devices Society
Online Access:https://ieeexplore.ieee.org/document/6874478/
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spelling doaj-1541e73b4f0a43abb358075f2657084a2021-03-29T18:42:31ZengIEEEIEEE Journal of the Electron Devices Society2168-67342014-01-012617918110.1109/JEDS.2014.23465846874478Electrical Hole Transport Properties of an Ambipolar Organic Compound With Zn-Atoms on a Crystalline Silicon HeterostructureG. Landi0W. R. Fahrner1S. Concilio2L. Sessa3H. C. Neitzert4Faculty of Mathematics and Computer Science, Fernuniversität Hagen, Hagen, GermanyFaculty of Mathematics and Computer Science, Fernuniversität Hagen, Hagen, GermanyDipartimento di Ingegneria Industriale, Università di Salerno, Fisciano, ItalyDipartimento di Ingegneria Industriale, Università di Salerno, Fisciano, ItalyDipartimento di Ingegneria Industriale, Università di Salerno, Fisciano, ItalyIn this paper, we investigate the electrical hole transport properties of an organic/inorganic heterostructure consisting of a thin organic film, that combines hole and electron conducting molecules around a bridging Zn-atom, deposited on top of an n-type crystalline silicon substrate. Current-voltage characteristics and capacitance voltage measurements have been used for the determination of the organic layer dielectric and hole conduction parameters.https://ieeexplore.ieee.org/document/6874478/
collection DOAJ
language English
format Article
sources DOAJ
author G. Landi
W. R. Fahrner
S. Concilio
L. Sessa
H. C. Neitzert
spellingShingle G. Landi
W. R. Fahrner
S. Concilio
L. Sessa
H. C. Neitzert
Electrical Hole Transport Properties of an Ambipolar Organic Compound With Zn-Atoms on a Crystalline Silicon Heterostructure
IEEE Journal of the Electron Devices Society
author_facet G. Landi
W. R. Fahrner
S. Concilio
L. Sessa
H. C. Neitzert
author_sort G. Landi
title Electrical Hole Transport Properties of an Ambipolar Organic Compound With Zn-Atoms on a Crystalline Silicon Heterostructure
title_short Electrical Hole Transport Properties of an Ambipolar Organic Compound With Zn-Atoms on a Crystalline Silicon Heterostructure
title_full Electrical Hole Transport Properties of an Ambipolar Organic Compound With Zn-Atoms on a Crystalline Silicon Heterostructure
title_fullStr Electrical Hole Transport Properties of an Ambipolar Organic Compound With Zn-Atoms on a Crystalline Silicon Heterostructure
title_full_unstemmed Electrical Hole Transport Properties of an Ambipolar Organic Compound With Zn-Atoms on a Crystalline Silicon Heterostructure
title_sort electrical hole transport properties of an ambipolar organic compound with zn-atoms on a crystalline silicon heterostructure
publisher IEEE
series IEEE Journal of the Electron Devices Society
issn 2168-6734
publishDate 2014-01-01
description In this paper, we investigate the electrical hole transport properties of an organic/inorganic heterostructure consisting of a thin organic film, that combines hole and electron conducting molecules around a bridging Zn-atom, deposited on top of an n-type crystalline silicon substrate. Current-voltage characteristics and capacitance voltage measurements have been used for the determination of the organic layer dielectric and hole conduction parameters.
url https://ieeexplore.ieee.org/document/6874478/
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AT wrfahrner electricalholetransportpropertiesofanambipolarorganiccompoundwithznatomsonacrystallinesiliconheterostructure
AT sconcilio electricalholetransportpropertiesofanambipolarorganiccompoundwithznatomsonacrystallinesiliconheterostructure
AT lsessa electricalholetransportpropertiesofanambipolarorganiccompoundwithznatomsonacrystallinesiliconheterostructure
AT hcneitzert electricalholetransportpropertiesofanambipolarorganiccompoundwithznatomsonacrystallinesiliconheterostructure
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