Electrical Hole Transport Properties of an Ambipolar Organic Compound With Zn-Atoms on a Crystalline Silicon Heterostructure
In this paper, we investigate the electrical hole transport properties of an organic/inorganic heterostructure consisting of a thin organic film, that combines hole and electron conducting molecules around a bridging Zn-atom, deposited on top of an n-type crystalline silicon substrate. Current-volta...
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doaj-1541e73b4f0a43abb358075f2657084a2021-03-29T18:42:31ZengIEEEIEEE Journal of the Electron Devices Society2168-67342014-01-012617918110.1109/JEDS.2014.23465846874478Electrical Hole Transport Properties of an Ambipolar Organic Compound With Zn-Atoms on a Crystalline Silicon HeterostructureG. Landi0W. R. Fahrner1S. Concilio2L. Sessa3H. C. Neitzert4Faculty of Mathematics and Computer Science, Fernuniversität Hagen, Hagen, GermanyFaculty of Mathematics and Computer Science, Fernuniversität Hagen, Hagen, GermanyDipartimento di Ingegneria Industriale, Università di Salerno, Fisciano, ItalyDipartimento di Ingegneria Industriale, Università di Salerno, Fisciano, ItalyDipartimento di Ingegneria Industriale, Università di Salerno, Fisciano, ItalyIn this paper, we investigate the electrical hole transport properties of an organic/inorganic heterostructure consisting of a thin organic film, that combines hole and electron conducting molecules around a bridging Zn-atom, deposited on top of an n-type crystalline silicon substrate. Current-voltage characteristics and capacitance voltage measurements have been used for the determination of the organic layer dielectric and hole conduction parameters.https://ieeexplore.ieee.org/document/6874478/ |
collection |
DOAJ |
language |
English |
format |
Article |
sources |
DOAJ |
author |
G. Landi W. R. Fahrner S. Concilio L. Sessa H. C. Neitzert |
spellingShingle |
G. Landi W. R. Fahrner S. Concilio L. Sessa H. C. Neitzert Electrical Hole Transport Properties of an Ambipolar Organic Compound With Zn-Atoms on a Crystalline Silicon Heterostructure IEEE Journal of the Electron Devices Society |
author_facet |
G. Landi W. R. Fahrner S. Concilio L. Sessa H. C. Neitzert |
author_sort |
G. Landi |
title |
Electrical Hole Transport Properties of an Ambipolar Organic Compound With Zn-Atoms on a Crystalline Silicon Heterostructure |
title_short |
Electrical Hole Transport Properties of an Ambipolar Organic Compound With Zn-Atoms on a Crystalline Silicon Heterostructure |
title_full |
Electrical Hole Transport Properties of an Ambipolar Organic Compound With Zn-Atoms on a Crystalline Silicon Heterostructure |
title_fullStr |
Electrical Hole Transport Properties of an Ambipolar Organic Compound With Zn-Atoms on a Crystalline Silicon Heterostructure |
title_full_unstemmed |
Electrical Hole Transport Properties of an Ambipolar Organic Compound With Zn-Atoms on a Crystalline Silicon Heterostructure |
title_sort |
electrical hole transport properties of an ambipolar organic compound with zn-atoms on a crystalline silicon heterostructure |
publisher |
IEEE |
series |
IEEE Journal of the Electron Devices Society |
issn |
2168-6734 |
publishDate |
2014-01-01 |
description |
In this paper, we investigate the electrical hole transport properties of an organic/inorganic heterostructure consisting of a thin organic film, that combines hole and electron conducting molecules around a bridging Zn-atom, deposited on top of an n-type crystalline silicon substrate. Current-voltage characteristics and capacitance voltage measurements have been used for the determination of the organic layer dielectric and hole conduction parameters. |
url |
https://ieeexplore.ieee.org/document/6874478/ |
work_keys_str_mv |
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1724196565607776256 |