A new generation of high-power semiconductor devices

• Main Author: Drndarević Vujo R.
• Format: Article
• Language: English
• Published: Savez inženjera i tehničara Srbije 2014-01-01
• Series: Tehnika
• Subjects: semiconductor; power electronics; SiC; GaN
• Online Access: http://scindeks-clanci.ceon.rs/data/pdf/0040-2176/2014/0040-21761406999D.pdf

Due to the constant development of technology and production, silicon semiconductor electronic components reach performance approaching the theoretical characteristics of the material. However, in many applications, especially in the field of power electronics, the available Si components can not meet the demands that are placed on the issue of operating voltage, switching frequency, efficiency and reliability. In order to overcome the resulting limitations, intensive research of new semiconductor materials that enable cost-effective implementation of semiconductor components with required characteristics are carried out. This paper presents a comparative analysis of semiconductor materials with wide energy band gap bearing in mind the possibility of their application in the field of power electronics and provides an overview of commercially available switching components implemented using new technologies and materials.