Adaptive Pulse Programming Scheme for Improving the V<sub>th</sub> Distribution and Program Performance in 3D NAND Flash Memory

Adaptive Pulse Programming Scheme for Improving the V<sub>th</sub> Distribution and Program Performance in 3D NAND Flash Memory

For triple-level or quad-level 3D NAND flash memory, narrowing the V<sub>th</sub> distribution of each state without influencing page program performance is one of the challenges. Considering this challenge, a novel adaptive pulse programming (APP) scheme was proposed. The proposed APP s...

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Bibliographic Details
Main Authors: Zhichao Du, Shuang Li, Yu Wang, Xiang Fu, Fei Liu, Qi Wang, Zongliang Huo
Format: Article
Language:English
Published: IEEE 2021-01-01
Series:IEEE Journal of the Electron Devices Society
Subjects:
3D NAND flash memory
ISPP
3-bit per cell
Vth distribution
Online Access:https://ieeexplore.ieee.org/document/9273036/
id doaj-152ffeab15fb421491c11d5d48b6cc4f
record_format Article
spelling doaj-152ffeab15fb421491c11d5d48b6cc4f2021-03-29T18:52:55ZengIEEEIEEE Journal of the Electron Devices Society2168-67342021-01-01910210710.1109/JEDS.2020.30410889273036Adaptive Pulse Programming Scheme for Improving the V<sub>th</sub> Distribution and Program Performance in 3D NAND Flash MemoryZhichao Du0https://orcid.org/0000-0003-4390-0343Shuang Li1Yu Wang2Xiang Fu3Fei Liu4Qi Wang5Zongliang Huo6https://orcid.org/0000-0002-9845-5649Chinese Academy of Sciences, Institute of Microelectronics, Beijing, ChinaChinese Academy of Sciences, Institute of Microelectronics, Beijing, ChinaYangtze Memory Technologies Company Ltd., Wuhan, ChinaYangtze Memory Technologies Company Ltd., Wuhan, ChinaChinese Academy of Sciences, Institute of Microelectronics, Beijing, ChinaChinese Academy of Sciences, Institute of Microelectronics, Beijing, ChinaChinese Academy of Sciences, Institute of Microelectronics, Beijing, ChinaFor triple-level or quad-level 3D NAND flash memory, narrowing the V<sub>th</sub> distribution of each state without influencing page program performance is one of the challenges. Considering this challenge, a novel adaptive pulse programming (APP) scheme was proposed. The proposed APP scheme adopted additional verify operations to separate the cells with different programming speed. It enhanced the program effect of slow cells by using increasing programming step voltage, and prevented the fast cells from over programming by using shorter programming pulse width through controlling the voltage of bitline. Compared with general incremental step pulse programming scheme, experimental results on TLC 3D NAND flash showed that, APP scheme could reduce the V<sub>th</sub> distribution width of cells by around 15&#x0025; and at the same time save the program time.https://ieeexplore.ieee.org/document/9273036/3D NAND flash memoryISPP3-bit per cellVth distribution
collection DOAJ
language English
format Article
sources DOAJ
author Zhichao Du
Shuang Li
Yu Wang
Xiang Fu
Fei Liu
Qi Wang
Zongliang Huo
spellingShingle Zhichao Du
Shuang Li
Yu Wang
Xiang Fu
Fei Liu
Qi Wang
Zongliang Huo
Adaptive Pulse Programming Scheme for Improving the V<sub>th</sub> Distribution and Program Performance in 3D NAND Flash Memory
IEEE Journal of the Electron Devices Society
3D NAND flash memory
ISPP
3-bit per cell
Vth distribution
author_facet Zhichao Du
Shuang Li
Yu Wang
Xiang Fu
Fei Liu
Qi Wang
Zongliang Huo
author_sort Zhichao Du
title Adaptive Pulse Programming Scheme for Improving the V<sub>th</sub> Distribution and Program Performance in 3D NAND Flash Memory
title_short Adaptive Pulse Programming Scheme for Improving the V<sub>th</sub> Distribution and Program Performance in 3D NAND Flash Memory
title_full Adaptive Pulse Programming Scheme for Improving the V<sub>th</sub> Distribution and Program Performance in 3D NAND Flash Memory
title_fullStr Adaptive Pulse Programming Scheme for Improving the V<sub>th</sub> Distribution and Program Performance in 3D NAND Flash Memory
title_full_unstemmed Adaptive Pulse Programming Scheme for Improving the V<sub>th</sub> Distribution and Program Performance in 3D NAND Flash Memory
title_sort adaptive pulse programming scheme for improving the v<sub>th</sub> distribution and program performance in 3d nand flash memory
publisher IEEE
series IEEE Journal of the Electron Devices Society
issn 2168-6734
publishDate 2021-01-01
description For triple-level or quad-level 3D NAND flash memory, narrowing the V<sub>th</sub> distribution of each state without influencing page program performance is one of the challenges. Considering this challenge, a novel adaptive pulse programming (APP) scheme was proposed. The proposed APP scheme adopted additional verify operations to separate the cells with different programming speed. It enhanced the program effect of slow cells by using increasing programming step voltage, and prevented the fast cells from over programming by using shorter programming pulse width through controlling the voltage of bitline. Compared with general incremental step pulse programming scheme, experimental results on TLC 3D NAND flash showed that, APP scheme could reduce the V<sub>th</sub> distribution width of cells by around 15&#x0025; and at the same time save the program time.
topic 3D NAND flash memory
ISPP
3-bit per cell
Vth distribution
url https://ieeexplore.ieee.org/document/9273036/
work_keys_str_mv AT zhichaodu adaptivepulseprogrammingschemeforimprovingthevsubthsubdistributionandprogramperformancein3dnandflashmemory
AT shuangli adaptivepulseprogrammingschemeforimprovingthevsubthsubdistributionandprogramperformancein3dnandflashmemory
AT yuwang adaptivepulseprogrammingschemeforimprovingthevsubthsubdistributionandprogramperformancein3dnandflashmemory
AT xiangfu adaptivepulseprogrammingschemeforimprovingthevsubthsubdistributionandprogramperformancein3dnandflashmemory
AT feiliu adaptivepulseprogrammingschemeforimprovingthevsubthsubdistributionandprogramperformancein3dnandflashmemory
AT qiwang adaptivepulseprogrammingschemeforimprovingthevsubthsubdistributionandprogramperformancein3dnandflashmemory
AT zonglianghuo adaptivepulseprogrammingschemeforimprovingthevsubthsubdistributionandprogramperformancein3dnandflashmemory
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