Performance of conversion efficiency of a crystalline silicon solar cell with base doping density

In this study, we investigate theoretically the electrical parameters of a crystalline silicon solar cell in steady state. Based on a one-dimensional modeling of the cell, the short circuit current density, the open circuit voltage, the shunt and series resistances and the conversion efficiency are...

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Main Authors:	Gokhan Sahin, Genber Kerimli, Fabe Idrissa Barro, Moustapha Sane, Mehmet Hakkı Alma
Format:	Article
Language:	English
Published:	Elsevier 2017-01-01
Series:	Results in Physics
Online Access:	http://www.sciencedirect.com/science/article/pii/S2211379717313669

id	doaj-14ec48b057504a13b3da2f5c6237d1e4
record_format	Article
spelling	doaj-14ec48b057504a13b3da2f5c6237d1e42020-11-25T02:50:46ZengElsevierResults in Physics2211-37972017-01-01742644268Performance of conversion efficiency of a crystalline silicon solar cell with base doping densityGokhan Sahin0Genber Kerimli1Fabe Idrissa Barro2Moustapha Sane3Mehmet Hakkı Alma4Electric and Electronic Engineering Department, IĞDIR University, Iğdır 76000, Turkey; Corresponding author.Electric and Electronic Engineering Department, IĞDIR University, Iğdır 76000, TurkeySemiconductors and Solar Energy Laboratory, Faculty of Science and Technique, Cheikh Anta Diop Universtity, BP5005 Dakar, SenegalSemiconductors and Solar Energy Laboratory, Faculty of Science and Technique, Cheikh Anta Diop Universtity, BP5005 Dakar, SenegalIndustrial Engineering Forestry Department, Kahramanmaras Sutcu Imam University, K. Maras 46060, TurkeyIn this study, we investigate theoretically the electrical parameters of a crystalline silicon solar cell in steady state. Based on a one-dimensional modeling of the cell, the short circuit current density, the open circuit voltage, the shunt and series resistances and the conversion efficiency are calculated, taking into account the base doping density. Either the I-V characteristic, series resistance, shunt resistance and conversion efficiency are determined and studied versus base doping density. The effects applied of base doping density on these parameters have been studied. The aim of this work is to show how short circuit current density, open circuit voltage and parasitic resistances are related to the base doping density and to exhibit the role played by those parasitic resistances on the conversion efficiency of the crystalline silicon solar. Keywords: Crystalline silicon solar cell, Base doping density, Series resistance, Shunt resistance, Conversion efficiencyhttp://www.sciencedirect.com/science/article/pii/S2211379717313669
collection	DOAJ
language	English
format	Article
sources	DOAJ
author	Gokhan Sahin Genber Kerimli Fabe Idrissa Barro Moustapha Sane Mehmet Hakkı Alma
spellingShingle	Gokhan Sahin Genber Kerimli Fabe Idrissa Barro Moustapha Sane Mehmet Hakkı Alma Performance of conversion efficiency of a crystalline silicon solar cell with base doping density Results in Physics
author_facet	Gokhan Sahin Genber Kerimli Fabe Idrissa Barro Moustapha Sane Mehmet Hakkı Alma
author_sort	Gokhan Sahin
title	Performance of conversion efficiency of a crystalline silicon solar cell with base doping density
title_short	Performance of conversion efficiency of a crystalline silicon solar cell with base doping density
title_full	Performance of conversion efficiency of a crystalline silicon solar cell with base doping density
title_fullStr	Performance of conversion efficiency of a crystalline silicon solar cell with base doping density
title_full_unstemmed	Performance of conversion efficiency of a crystalline silicon solar cell with base doping density
title_sort	performance of conversion efficiency of a crystalline silicon solar cell with base doping density
publisher	Elsevier
series	Results in Physics
issn	2211-3797
publishDate	2017-01-01
description	In this study, we investigate theoretically the electrical parameters of a crystalline silicon solar cell in steady state. Based on a one-dimensional modeling of the cell, the short circuit current density, the open circuit voltage, the shunt and series resistances and the conversion efficiency are calculated, taking into account the base doping density. Either the I-V characteristic, series resistance, shunt resistance and conversion efficiency are determined and studied versus base doping density. The effects applied of base doping density on these parameters have been studied. The aim of this work is to show how short circuit current density, open circuit voltage and parasitic resistances are related to the base doping density and to exhibit the role played by those parasitic resistances on the conversion efficiency of the crystalline silicon solar. Keywords: Crystalline silicon solar cell, Base doping density, Series resistance, Shunt resistance, Conversion efficiency
url	http://www.sciencedirect.com/science/article/pii/S2211379717313669
work_keys_str_mv	AT gokhansahin performanceofconversionefficiencyofacrystallinesiliconsolarcellwithbasedopingdensity AT genberkerimli performanceofconversionefficiencyofacrystallinesiliconsolarcellwithbasedopingdensity AT fabeidrissabarro performanceofconversionefficiencyofacrystallinesiliconsolarcellwithbasedopingdensity AT moustaphasane performanceofconversionefficiencyofacrystallinesiliconsolarcellwithbasedopingdensity AT mehmethakkıalma performanceofconversionefficiencyofacrystallinesiliconsolarcellwithbasedopingdensity
_version_	1724736479301730304

Performance of conversion efficiency of a crystalline silicon solar cell with base doping density

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