Enhancement in Photoelectrochemical Performance of Optimized Amorphous SnS₂ Thin Film Fabricated through Atomic Layer Deposition

• Main Authors: Weiguang Hu, Truong Thi Hien, Dojin Kim, Hyo Sik Chang
• Format: Article
• Language: English
• Published: MDPI AG 2019-07-01
• Series: Nanomaterials
• Subjects: Amorphous SnS₂ film; Atomic layer deposition; Photoelectrochemical performance; Deposition temperature; Thickness; Photoelectron separation
• Online Access: https://www.mdpi.com/2079-4991/9/8/1083

Two-dimensional (2D) nanomaterials have distinct optical and electrical properties owing to their unique structures. In this study, smooth 2D amorphous tin disulfide (SnS₂) films were fabricated by atomic layer deposition (ALD), and applied for the first time to photoelectrochemical water splitting. The optimal stable photocurrent density of the 50-nm-thick amorphous SnS₂ film fabricated at 140 °C was 51.5 µA/cm² at an oxygen evolution reaction (0.8 V vs. saturated calomel electrode (SCE)). This value is better than those of most polycrystalline SnS₂ films reported in recent years. These results are attributed mainly to adjustable optical band gap in the range of 2.80 to 2.52 eV, precise control of the film thickness at the nanoscale, and the close contact between the prepared SnS₂ film and substrate. Subsequently, the photoelectron separation mechanisms of the amorphous, monocrystalline, and polycrystalline SnS₂ films are discussed. Considering above advantages, the ALD amorphous SnS₂ film can be designed and fabricated according to the application requirements.