On the Ammonia Sensing Performance and Transmission Approach of a Platinum/Nickel Oxide/GaN-Based Metal-Oxide-Semiconductor Diode

On the Ammonia Sensing Performance and Transmission Approach of a Platinum/Nickel Oxide/GaN-Based Metal-Oxide-Semiconductor Diode

New platinum (Pt)/nickel oxide (NiO)/GaN-based metal-oxide-semiconductor (MOS) diodetype ammonia sensor was fabricated and studied. In addition, a new grey polynomial differential recovery (GPDR) model was developed for the application of data transmission. The studied Pt/NiO/GaNbased MOS diode show...

Full description

Bibliographic Details
Main Authors: I-Ping Liu, Ching-Hong Chang, Yen-Ming Huang, Kun-Wei Lin
Format: Article
Language:English
Published: IEEE 2019-01-01
Series:IEEE Journal of the Electron Devices Society
Subjects:
Ammonia
Pt/NiO/GaN
operating flexibility
Schottky diode
GPDR
Online Access:https://ieeexplore.ieee.org/document/8681536/

Internet

https://ieeexplore.ieee.org/document/8681536/

Similar Items