Enhanced Spin Accumulation in Semiconductor at Room Temperature Using Ni0.65Zn0.35Fe2O4(NZFO) as Spin Injector in NZFO/MgO/p-Si Device
In this article, the fabrication of a Ni0.65Zn0.35Fe2O4/MgO/p-Si heterostructure device has been optimized using the pulsed laser deposition (PLD) technique, and a detailed investigation of its structural, electrical, and magnetic features has been performed experimentally. The electronic and magnet...
| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
Frontiers Media S.A.
2021-10-01
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| Series: | Frontiers in Materials |
| Subjects: | |
| Online Access: | https://www.frontiersin.org/articles/10.3389/fmats.2021.721031/full |