PtSi Clustering in Silicon Probed by Transport Spectroscopy
Metal silicides formed by means of thermal annealing processes are employed as contact materials in microelectronics. Control of the structure of silicide/silicon interfaces becomes a critical issue when the characteristic size of the device is reduced below a few tens of nanometers. Here, we report...
| Main Authors: | , , , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
American Physical Society
2013-12-01
|
| Series: | Physical Review X |
| Online Access: | http://doi.org/10.1103/PhysRevX.3.041025 |