Design and simulation of silicon detector cells with spiral ring electrode structures
Traditional pixel detectors are neatly arranged rectangular or square electrodes that cover almost the entire surface. Large electrode areas lead to high capacitance, and capacitance is the primary factor affecting detector noise. A large noise signal will reduce detector detection performance and t...
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2021-04-01
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Online Access: | http://dx.doi.org/10.1063/5.0049765 |
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doaj-132fefcb99744907b2a9302525119e1b2021-05-04T14:07:17ZengAIP Publishing LLCAIP Advances2158-32262021-04-01114045127045127-1010.1063/5.0049765Design and simulation of silicon detector cells with spiral ring electrode structuresXinqing Li0Manwen Liu1Zheng Li2College of Physics and Optoelectronic Engineering, Ludong University, Yantai 264025, ChinaInstitute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, ChinaCollege of Physics and Optoelectronic Engineering, Ludong University, Yantai 264025, ChinaTraditional pixel detectors are neatly arranged rectangular or square electrodes that cover almost the entire surface. Large electrode areas lead to high capacitance, and capacitance is the primary factor affecting detector noise. A large noise signal will reduce detector detection performance and the system S/N ratio. We have designed a spiral ring electrode silicon detector cell with n-type silicon bulk and systematically studied its electrical properties, including electric potential distribution, electric field distribution, electron concentration distribution, leakage current, full depletion voltage, and detector capacitance. It has been verified that the spiral ring electrode silicon detector has a smaller capacitance than the traditional detector and a smaller depletion voltage compared with the previously designed structures such as the inner circle broom-shaped structure. At the same time, high position resolution pixel detectors can be made by the array of these detector cells.http://dx.doi.org/10.1063/5.0049765 |
collection |
DOAJ |
language |
English |
format |
Article |
sources |
DOAJ |
author |
Xinqing Li Manwen Liu Zheng Li |
spellingShingle |
Xinqing Li Manwen Liu Zheng Li Design and simulation of silicon detector cells with spiral ring electrode structures AIP Advances |
author_facet |
Xinqing Li Manwen Liu Zheng Li |
author_sort |
Xinqing Li |
title |
Design and simulation of silicon detector cells with spiral ring electrode structures |
title_short |
Design and simulation of silicon detector cells with spiral ring electrode structures |
title_full |
Design and simulation of silicon detector cells with spiral ring electrode structures |
title_fullStr |
Design and simulation of silicon detector cells with spiral ring electrode structures |
title_full_unstemmed |
Design and simulation of silicon detector cells with spiral ring electrode structures |
title_sort |
design and simulation of silicon detector cells with spiral ring electrode structures |
publisher |
AIP Publishing LLC |
series |
AIP Advances |
issn |
2158-3226 |
publishDate |
2021-04-01 |
description |
Traditional pixel detectors are neatly arranged rectangular or square electrodes that cover almost the entire surface. Large electrode areas lead to high capacitance, and capacitance is the primary factor affecting detector noise. A large noise signal will reduce detector detection performance and the system S/N ratio. We have designed a spiral ring electrode silicon detector cell with n-type silicon bulk and systematically studied its electrical properties, including electric potential distribution, electric field distribution, electron concentration distribution, leakage current, full depletion voltage, and detector capacitance. It has been verified that the spiral ring electrode silicon detector has a smaller capacitance than the traditional detector and a smaller depletion voltage compared with the previously designed structures such as the inner circle broom-shaped structure. At the same time, high position resolution pixel detectors can be made by the array of these detector cells. |
url |
http://dx.doi.org/10.1063/5.0049765 |
work_keys_str_mv |
AT xinqingli designandsimulationofsilicondetectorcellswithspiralringelectrodestructures AT manwenliu designandsimulationofsilicondetectorcellswithspiralringelectrodestructures AT zhengli designandsimulationofsilicondetectorcellswithspiralringelectrodestructures |
_version_ |
1721478678130458624 |