Sliding-friction-dependent stress at the graphene/LiNbO3 interface around the critical temperature of the stress-free state

The graphene/LiNbO3 structure exists in an interfacial stress-free state at the temperature at which the graphene was transferred onto the LiNbO3 substrate surface. Coupling of a surface acoustic wave with this structure revealed drastic changes in the properties of the propagating elastic wave arou...

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Main Authors: Yong Sun, Kenta Kirimoto, Hiroyuki Kamada, Koichi Onishi, Daichi Etoh, Shohei Yoshimura, Shigeru Kanemitsu
Format: Article
Language:English
Published: AIP Publishing LLC 2019-02-01
Series:AIP Advances
Online Access:http://dx.doi.org/10.1063/1.5050861
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spelling doaj-12d6a7bd32514a49a6a5103da35665e62020-11-24T21:33:22ZengAIP Publishing LLCAIP Advances2158-32262019-02-0192025316025316-1010.1063/1.5050861085902ADVSliding-friction-dependent stress at the graphene/LiNbO3 interface around the critical temperature of the stress-free stateYong Sun0Kenta Kirimoto1Hiroyuki Kamada2Koichi Onishi3Daichi Etoh4Shohei Yoshimura5Shigeru Kanemitsu6Department of Applied Science for Integrated System Engineering, Kyushu Institute of Technology, 1-1 Senshuimachi, Tobata, Kitakyushu, Fukuoka 804-8550, JapanDepartment of Electrical and Electronic Engineering, Kitakyushu National College of Technology, 5-20-1 shii, Kokuraminami, Kitakyushu, Fukuoka 802-0985, JapanDepartment of Physics, Kyushu Institute of Technology, 1-1 Senshuimachi, Tobata, Kitakyushu, Fukuoka 804-8550, JapanDepartment of Applied Science for Integrated System Engineering, Kyushu Institute of Technology, 1-1 Senshuimachi, Tobata, Kitakyushu, Fukuoka 804-8550, JapanDepartment of Applied Science for Integrated System Engineering, Kyushu Institute of Technology, 1-1 Senshuimachi, Tobata, Kitakyushu, Fukuoka 804-8550, JapanDepartment of Applied Science for Integrated System Engineering, Kyushu Institute of Technology, 1-1 Senshuimachi, Tobata, Kitakyushu, Fukuoka 804-8550, JapanDepartment of Applied Science for Integrated System Engineering, Kyushu Institute of Technology, 1-1 Senshuimachi, Tobata, Kitakyushu, Fukuoka 804-8550, JapanThe graphene/LiNbO3 structure exists in an interfacial stress-free state at the temperature at which the graphene was transferred onto the LiNbO3 substrate surface. Coupling of a surface acoustic wave with this structure revealed drastic changes in the properties of the propagating elastic wave around the critical temperature of the stress-free state. Three states, namely, tensile stress, stress-free, and compressive stress, were successively observed at the surface of the LiNbO3 substrate as the temperature was increased through the critical point. The interfacial stress increased prior to the occurrence of sliding friction and approached a constant value when the frictional force exceeded the van der Waals interaction between the graphene and LiNbO3. Consequently, the interfacial stress exhibited a step-like temperature dependence around the critical temperature of the stress-free state. The results obtained in this study indicate that the temperature used to prepare graphene layers on a substrate is a crucial parameter owing to the instability of the electrical and mechanical properties of the graphene/substrate in the vicinity of this temperature. Therefore, in the fabrication of graphene-based electronic devices, room temperature should be avoided during the preparation of the graphene layers on the substrate.http://dx.doi.org/10.1063/1.5050861
collection DOAJ
language English
format Article
sources DOAJ
author Yong Sun
Kenta Kirimoto
Hiroyuki Kamada
Koichi Onishi
Daichi Etoh
Shohei Yoshimura
Shigeru Kanemitsu
spellingShingle Yong Sun
Kenta Kirimoto
Hiroyuki Kamada
Koichi Onishi
Daichi Etoh
Shohei Yoshimura
Shigeru Kanemitsu
Sliding-friction-dependent stress at the graphene/LiNbO3 interface around the critical temperature of the stress-free state
AIP Advances
author_facet Yong Sun
Kenta Kirimoto
Hiroyuki Kamada
Koichi Onishi
Daichi Etoh
Shohei Yoshimura
Shigeru Kanemitsu
author_sort Yong Sun
title Sliding-friction-dependent stress at the graphene/LiNbO3 interface around the critical temperature of the stress-free state
title_short Sliding-friction-dependent stress at the graphene/LiNbO3 interface around the critical temperature of the stress-free state
title_full Sliding-friction-dependent stress at the graphene/LiNbO3 interface around the critical temperature of the stress-free state
title_fullStr Sliding-friction-dependent stress at the graphene/LiNbO3 interface around the critical temperature of the stress-free state
title_full_unstemmed Sliding-friction-dependent stress at the graphene/LiNbO3 interface around the critical temperature of the stress-free state
title_sort sliding-friction-dependent stress at the graphene/linbo3 interface around the critical temperature of the stress-free state
publisher AIP Publishing LLC
series AIP Advances
issn 2158-3226
publishDate 2019-02-01
description The graphene/LiNbO3 structure exists in an interfacial stress-free state at the temperature at which the graphene was transferred onto the LiNbO3 substrate surface. Coupling of a surface acoustic wave with this structure revealed drastic changes in the properties of the propagating elastic wave around the critical temperature of the stress-free state. Three states, namely, tensile stress, stress-free, and compressive stress, were successively observed at the surface of the LiNbO3 substrate as the temperature was increased through the critical point. The interfacial stress increased prior to the occurrence of sliding friction and approached a constant value when the frictional force exceeded the van der Waals interaction between the graphene and LiNbO3. Consequently, the interfacial stress exhibited a step-like temperature dependence around the critical temperature of the stress-free state. The results obtained in this study indicate that the temperature used to prepare graphene layers on a substrate is a crucial parameter owing to the instability of the electrical and mechanical properties of the graphene/substrate in the vicinity of this temperature. Therefore, in the fabrication of graphene-based electronic devices, room temperature should be avoided during the preparation of the graphene layers on the substrate.
url http://dx.doi.org/10.1063/1.5050861
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