Sliding-friction-dependent stress at the graphene/LiNbO3 interface around the critical temperature of the stress-free state
The graphene/LiNbO3 structure exists in an interfacial stress-free state at the temperature at which the graphene was transferred onto the LiNbO3 substrate surface. Coupling of a surface acoustic wave with this structure revealed drastic changes in the properties of the propagating elastic wave arou...
Main Authors: | , , , , , , |
---|---|
Format: | Article |
Language: | English |
Published: |
AIP Publishing LLC
2019-02-01
|
Series: | AIP Advances |
Online Access: | http://dx.doi.org/10.1063/1.5050861 |
id |
doaj-12d6a7bd32514a49a6a5103da35665e6 |
---|---|
record_format |
Article |
spelling |
doaj-12d6a7bd32514a49a6a5103da35665e62020-11-24T21:33:22ZengAIP Publishing LLCAIP Advances2158-32262019-02-0192025316025316-1010.1063/1.5050861085902ADVSliding-friction-dependent stress at the graphene/LiNbO3 interface around the critical temperature of the stress-free stateYong Sun0Kenta Kirimoto1Hiroyuki Kamada2Koichi Onishi3Daichi Etoh4Shohei Yoshimura5Shigeru Kanemitsu6Department of Applied Science for Integrated System Engineering, Kyushu Institute of Technology, 1-1 Senshuimachi, Tobata, Kitakyushu, Fukuoka 804-8550, JapanDepartment of Electrical and Electronic Engineering, Kitakyushu National College of Technology, 5-20-1 shii, Kokuraminami, Kitakyushu, Fukuoka 802-0985, JapanDepartment of Physics, Kyushu Institute of Technology, 1-1 Senshuimachi, Tobata, Kitakyushu, Fukuoka 804-8550, JapanDepartment of Applied Science for Integrated System Engineering, Kyushu Institute of Technology, 1-1 Senshuimachi, Tobata, Kitakyushu, Fukuoka 804-8550, JapanDepartment of Applied Science for Integrated System Engineering, Kyushu Institute of Technology, 1-1 Senshuimachi, Tobata, Kitakyushu, Fukuoka 804-8550, JapanDepartment of Applied Science for Integrated System Engineering, Kyushu Institute of Technology, 1-1 Senshuimachi, Tobata, Kitakyushu, Fukuoka 804-8550, JapanDepartment of Applied Science for Integrated System Engineering, Kyushu Institute of Technology, 1-1 Senshuimachi, Tobata, Kitakyushu, Fukuoka 804-8550, JapanThe graphene/LiNbO3 structure exists in an interfacial stress-free state at the temperature at which the graphene was transferred onto the LiNbO3 substrate surface. Coupling of a surface acoustic wave with this structure revealed drastic changes in the properties of the propagating elastic wave around the critical temperature of the stress-free state. Three states, namely, tensile stress, stress-free, and compressive stress, were successively observed at the surface of the LiNbO3 substrate as the temperature was increased through the critical point. The interfacial stress increased prior to the occurrence of sliding friction and approached a constant value when the frictional force exceeded the van der Waals interaction between the graphene and LiNbO3. Consequently, the interfacial stress exhibited a step-like temperature dependence around the critical temperature of the stress-free state. The results obtained in this study indicate that the temperature used to prepare graphene layers on a substrate is a crucial parameter owing to the instability of the electrical and mechanical properties of the graphene/substrate in the vicinity of this temperature. Therefore, in the fabrication of graphene-based electronic devices, room temperature should be avoided during the preparation of the graphene layers on the substrate.http://dx.doi.org/10.1063/1.5050861 |
collection |
DOAJ |
language |
English |
format |
Article |
sources |
DOAJ |
author |
Yong Sun Kenta Kirimoto Hiroyuki Kamada Koichi Onishi Daichi Etoh Shohei Yoshimura Shigeru Kanemitsu |
spellingShingle |
Yong Sun Kenta Kirimoto Hiroyuki Kamada Koichi Onishi Daichi Etoh Shohei Yoshimura Shigeru Kanemitsu Sliding-friction-dependent stress at the graphene/LiNbO3 interface around the critical temperature of the stress-free state AIP Advances |
author_facet |
Yong Sun Kenta Kirimoto Hiroyuki Kamada Koichi Onishi Daichi Etoh Shohei Yoshimura Shigeru Kanemitsu |
author_sort |
Yong Sun |
title |
Sliding-friction-dependent stress at the graphene/LiNbO3 interface around the critical temperature of the stress-free state |
title_short |
Sliding-friction-dependent stress at the graphene/LiNbO3 interface around the critical temperature of the stress-free state |
title_full |
Sliding-friction-dependent stress at the graphene/LiNbO3 interface around the critical temperature of the stress-free state |
title_fullStr |
Sliding-friction-dependent stress at the graphene/LiNbO3 interface around the critical temperature of the stress-free state |
title_full_unstemmed |
Sliding-friction-dependent stress at the graphene/LiNbO3 interface around the critical temperature of the stress-free state |
title_sort |
sliding-friction-dependent stress at the graphene/linbo3 interface around the critical temperature of the stress-free state |
publisher |
AIP Publishing LLC |
series |
AIP Advances |
issn |
2158-3226 |
publishDate |
2019-02-01 |
description |
The graphene/LiNbO3 structure exists in an interfacial stress-free state at the temperature at which the graphene was transferred onto the LiNbO3 substrate surface. Coupling of a surface acoustic wave with this structure revealed drastic changes in the properties of the propagating elastic wave around the critical temperature of the stress-free state. Three states, namely, tensile stress, stress-free, and compressive stress, were successively observed at the surface of the LiNbO3 substrate as the temperature was increased through the critical point. The interfacial stress increased prior to the occurrence of sliding friction and approached a constant value when the frictional force exceeded the van der Waals interaction between the graphene and LiNbO3. Consequently, the interfacial stress exhibited a step-like temperature dependence around the critical temperature of the stress-free state. The results obtained in this study indicate that the temperature used to prepare graphene layers on a substrate is a crucial parameter owing to the instability of the electrical and mechanical properties of the graphene/substrate in the vicinity of this temperature. Therefore, in the fabrication of graphene-based electronic devices, room temperature should be avoided during the preparation of the graphene layers on the substrate. |
url |
http://dx.doi.org/10.1063/1.5050861 |
work_keys_str_mv |
AT yongsun slidingfrictiondependentstressatthegraphenelinbo3interfacearoundthecriticaltemperatureofthestressfreestate AT kentakirimoto slidingfrictiondependentstressatthegraphenelinbo3interfacearoundthecriticaltemperatureofthestressfreestate AT hiroyukikamada slidingfrictiondependentstressatthegraphenelinbo3interfacearoundthecriticaltemperatureofthestressfreestate AT koichionishi slidingfrictiondependentstressatthegraphenelinbo3interfacearoundthecriticaltemperatureofthestressfreestate AT daichietoh slidingfrictiondependentstressatthegraphenelinbo3interfacearoundthecriticaltemperatureofthestressfreestate AT shoheiyoshimura slidingfrictiondependentstressatthegraphenelinbo3interfacearoundthecriticaltemperatureofthestressfreestate AT shigerukanemitsu slidingfrictiondependentstressatthegraphenelinbo3interfacearoundthecriticaltemperatureofthestressfreestate |
_version_ |
1725953674421731328 |