Mechanisms of Electron Scattering in Uniaxially Deformed Silicon Single Crystals with Radiation Defects
Temperature dependencies for Hall mobility of electrons for the uniaxially deformed n-Si single crystals, irradiated by the flow of electrons Ω=1·1017 el./cm2 with the energy of 12 MeV, are obtained on the basis of piezo-Hall effect measurements. From the analysis of these dependencies it follows th...
| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Sciendo
2019-10-01
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| Series: | Latvian Journal of Physics and Technical Sciences |
| Subjects: | |
| Online Access: | https://doi.org/10.2478/lpts-2019-0030 |