SiC-Based High Efficiency High Isolation Dual Active Bridge Converter for a Power Electronic Transformer

SiC-Based High Efficiency High Isolation Dual Active Bridge Converter for a Power Electronic Transformer

This paper discusses the benefits of using silicon carbide (SiC) devices in a three-stage modular power electronic transformer. According to the requirements to be fulfilled by each stage, the second one (the DC/DC isolation converter) presents the most estimable improvements to be gained from the u...

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Bibliographic Details
Main Authors: Mariam Saeed, María R. Rogina, Alberto Rodríguez, Manuel Arias, Fernando Briz
Format: Article
Language:English
Published: MDPI AG 2020-03-01
Series:Energies
Subjects:
sic devices
antiparallel diode
dual active bridge
power electronic transformer
high-frequency transformer
Online Access:https://www.mdpi.com/1996-1073/13/5/1198
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spelling doaj-12a1830d52834ca8a69499693d5fe9cd2020-11-25T01:40:48ZengMDPI AGEnergies1996-10732020-03-01135119810.3390/en13051198en13051198SiC-Based High Efficiency High Isolation Dual Active Bridge Converter for a Power Electronic TransformerMariam Saeed0María R. Rogina1Alberto Rodríguez2Manuel Arias3Fernando Briz4Department of Electrical Engineering, University of Oviedo, 33204 Asturias, SpainDepartment of Electrical Engineering, University of Oviedo, 33204 Asturias, SpainDepartment of Electrical Engineering, University of Oviedo, 33204 Asturias, SpainDepartment of Electrical Engineering, University of Oviedo, 33204 Asturias, SpainDepartment of Electrical Engineering, University of Oviedo, 33204 Asturias, SpainThis paper discusses the benefits of using silicon carbide (SiC) devices in a three-stage modular power electronic transformer. According to the requirements to be fulfilled by each stage, the second one (the DC/DC isolation converter) presents the most estimable improvements to be gained from the use of SiC devices. Therefore, this paper is focused on this second stage, implemented with a SiC-based dual active bridge. Selection of the SiC devices is detailed tackling the efficiency improvement which can be obtained when they are co-packed with SiC antiparallel Schottky diodes in addition to their intrinsic body diode. This efficiency improvement is dependent on the dual active bridge operation point. Hence, a simple device loss model is presented to assess the efficiency improvement and understand the reasons for this dependence. Experimental results from a 5-kW Dual Active Bridge prototype have been obtained to validate the model. The dual active bridge converter is also tested as part of the full PET module operating at rated power.https://www.mdpi.com/1996-1073/13/5/1198sic devicesantiparallel diodedual active bridgepower electronic transformerhigh-frequency transformer
collection DOAJ
language English
format Article
sources DOAJ
author Mariam Saeed
María R. Rogina
Alberto Rodríguez
Manuel Arias
Fernando Briz
spellingShingle Mariam Saeed
María R. Rogina
Alberto Rodríguez
Manuel Arias
Fernando Briz
SiC-Based High Efficiency High Isolation Dual Active Bridge Converter for a Power Electronic Transformer
Energies
sic devices
antiparallel diode
dual active bridge
power electronic transformer
high-frequency transformer
author_facet Mariam Saeed
María R. Rogina
Alberto Rodríguez
Manuel Arias
Fernando Briz
author_sort Mariam Saeed
title SiC-Based High Efficiency High Isolation Dual Active Bridge Converter for a Power Electronic Transformer
title_short SiC-Based High Efficiency High Isolation Dual Active Bridge Converter for a Power Electronic Transformer
title_full SiC-Based High Efficiency High Isolation Dual Active Bridge Converter for a Power Electronic Transformer
title_fullStr SiC-Based High Efficiency High Isolation Dual Active Bridge Converter for a Power Electronic Transformer
title_full_unstemmed SiC-Based High Efficiency High Isolation Dual Active Bridge Converter for a Power Electronic Transformer
title_sort sic-based high efficiency high isolation dual active bridge converter for a power electronic transformer
publisher MDPI AG
series Energies
issn 1996-1073
publishDate 2020-03-01
description This paper discusses the benefits of using silicon carbide (SiC) devices in a three-stage modular power electronic transformer. According to the requirements to be fulfilled by each stage, the second one (the DC/DC isolation converter) presents the most estimable improvements to be gained from the use of SiC devices. Therefore, this paper is focused on this second stage, implemented with a SiC-based dual active bridge. Selection of the SiC devices is detailed tackling the efficiency improvement which can be obtained when they are co-packed with SiC antiparallel Schottky diodes in addition to their intrinsic body diode. This efficiency improvement is dependent on the dual active bridge operation point. Hence, a simple device loss model is presented to assess the efficiency improvement and understand the reasons for this dependence. Experimental results from a 5-kW Dual Active Bridge prototype have been obtained to validate the model. The dual active bridge converter is also tested as part of the full PET module operating at rated power.
topic sic devices
antiparallel diode
dual active bridge
power electronic transformer
high-frequency transformer
url https://www.mdpi.com/1996-1073/13/5/1198
work_keys_str_mv AT mariamsaeed sicbasedhighefficiencyhighisolationdualactivebridgeconverterforapowerelectronictransformer
AT mariarrogina sicbasedhighefficiencyhighisolationdualactivebridgeconverterforapowerelectronictransformer
AT albertorodriguez sicbasedhighefficiencyhighisolationdualactivebridgeconverterforapowerelectronictransformer
AT manuelarias sicbasedhighefficiencyhighisolationdualactivebridgeconverterforapowerelectronictransformer
AT fernandobriz sicbasedhighefficiencyhighisolationdualactivebridgeconverterforapowerelectronictransformer
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