1/f noise and carrier transport mechanisms in InSb p + -n junctions

• Main Authors: V.V. Tetyorkin, A.V. Sukach, A.I. Tkachuk, S.P. Trotsenko
• Format: Article
• Language: English
• Published: National Academy of Sciences of Ukraine. Institute of Semi conductor physics. 2018-12-01
• Series: Semiconductor Physics, Quantum Electronics & Optoelectronics
• Subjects: InSb; infrared spectrum; p-n junction; trap-assisted tunneling; 1/f noise
• Online Access: http://journal-spqeo.org.ua/n4_2018/P374-379abstr.html

The dark current and 1/f noise spectra have been investigated in p + -n InSb junctions. The photodiodes were prepared by Cd diffusion into single crystal substrates. The current-voltage characteristics have been explained within a model of inhomogeneous p-n junction. The junction inhomogeneities are caused by dislocations crossing the depletion region. The correlation between the trap-assisted tunneling current through the local inhomogeneous regions of the junction and 1/f noise has been shown to exist. The fluctuations of the junction resistance have been argued to be responsible for the origin of 1/f noise.