Electrical Switching in Thin Film Structures Based on Transition Metal Oxides

Electrical switching, manifesting itself in the nonlinear current-voltage characteristics with S- and N-type NDR (negative differential resistance), is inherent in a variety of materials, in particular, transition metal oxides. Although this phenomenon has been known for a long time, recent suggesti...

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Main Authors: A. Pergament, G. Stefanovich, V. Malinenko, A. Velichko
Format: Article
Language:English
Published: Hindawi Limited 2015-01-01
Series:Advances in Condensed Matter Physics
Online Access:http://dx.doi.org/10.1155/2015/654840
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spelling doaj-12762ba5059b4bf89293ed1d2514505a2020-11-24T21:12:40ZengHindawi LimitedAdvances in Condensed Matter Physics1687-81081687-81242015-01-01201510.1155/2015/654840654840Electrical Switching in Thin Film Structures Based on Transition Metal OxidesA. Pergament0G. Stefanovich1V. Malinenko2A. Velichko3Faculty of Physical Engineering, Petrozavodsk State University, Petrozavodsk 185910, RussiaFaculty of Physical Engineering, Petrozavodsk State University, Petrozavodsk 185910, RussiaFaculty of Physical Engineering, Petrozavodsk State University, Petrozavodsk 185910, RussiaFaculty of Physical Engineering, Petrozavodsk State University, Petrozavodsk 185910, RussiaElectrical switching, manifesting itself in the nonlinear current-voltage characteristics with S- and N-type NDR (negative differential resistance), is inherent in a variety of materials, in particular, transition metal oxides. Although this phenomenon has been known for a long time, recent suggestions to use oxide-based switching elements as neuristor synapses and relaxation-oscillation circuit components have resumed the interest in this area. In the present review, we describe the experimental facts and theoretical models, mainly on the basis of the Mott transition in vanadium dioxide as a model object, of the switching effect with special emphasis on the emerging applied potentialities for oxide electronics.http://dx.doi.org/10.1155/2015/654840
collection DOAJ
language English
format Article
sources DOAJ
author A. Pergament
G. Stefanovich
V. Malinenko
A. Velichko
spellingShingle A. Pergament
G. Stefanovich
V. Malinenko
A. Velichko
Electrical Switching in Thin Film Structures Based on Transition Metal Oxides
Advances in Condensed Matter Physics
author_facet A. Pergament
G. Stefanovich
V. Malinenko
A. Velichko
author_sort A. Pergament
title Electrical Switching in Thin Film Structures Based on Transition Metal Oxides
title_short Electrical Switching in Thin Film Structures Based on Transition Metal Oxides
title_full Electrical Switching in Thin Film Structures Based on Transition Metal Oxides
title_fullStr Electrical Switching in Thin Film Structures Based on Transition Metal Oxides
title_full_unstemmed Electrical Switching in Thin Film Structures Based on Transition Metal Oxides
title_sort electrical switching in thin film structures based on transition metal oxides
publisher Hindawi Limited
series Advances in Condensed Matter Physics
issn 1687-8108
1687-8124
publishDate 2015-01-01
description Electrical switching, manifesting itself in the nonlinear current-voltage characteristics with S- and N-type NDR (negative differential resistance), is inherent in a variety of materials, in particular, transition metal oxides. Although this phenomenon has been known for a long time, recent suggestions to use oxide-based switching elements as neuristor synapses and relaxation-oscillation circuit components have resumed the interest in this area. In the present review, we describe the experimental facts and theoretical models, mainly on the basis of the Mott transition in vanadium dioxide as a model object, of the switching effect with special emphasis on the emerging applied potentialities for oxide electronics.
url http://dx.doi.org/10.1155/2015/654840
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AT gstefanovich electricalswitchinginthinfilmstructuresbasedontransitionmetaloxides
AT vmalinenko electricalswitchinginthinfilmstructuresbasedontransitionmetaloxides
AT avelichko electricalswitchinginthinfilmstructuresbasedontransitionmetaloxides
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