High-efficiency gate-defined quantum dot to single mode fiber interface assisted by a photonic crystal cavity

• Main Authors: K. Wu, B. Marzban, T. Descamps, H. Bluhm, F. Merget, J. Witzens
• Format: Article
• Language: English
• Published: AIP Publishing LLC 2020-11-01
• Series: AIP Advances
• Online Access: http://dx.doi.org/10.1063/5.0030765

Efficiently interfacing photonic with semiconductor qubits plays an important role in future quantum communication applications. In this paper, we model a photon to exciton interface based on an optically active gate-defined quantum dot (OAQD) embedded in a carefully designed photonic crystal cavity constraining its emission profile via the Purcell effect while maintaining a low enough quality factor to allow for electrical tuning of the emission wavelength. By matching the in-plane k-vector of a cavity mode and the reciprocal lattice constant of the photonic crystal, vertical emission is obtained. A back-reflection mirror located below the cavity and integrated as part of an already predefined process flow allows for not only the increasing of the light extraction efficiency but also the tailoring of the extracted beam profile to match that of a single mode fiber. We numerically show that a photon emitted by the OAQD can be coupled to the targeted free-space Gaussian beam with a probability above 50%, limited by electrode absorption. Further efficiency improvement up to 90% is possible by using indium tin oxide instead of gold as a gate material.