Development of high power X-band semiconductor microwave switch for pulse compression systems of future linear colliders
We describe concepts for high power semiconductor rf switches, designed to handle signals at X-band with power level near 100 MW. We describe an abstract design methodology and derive a general scaling law for these switches. We also present a design and experimental work of a switch operating at th...
| Main Authors: | , |
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| Format: | Article |
| Language: | English |
| Published: |
American Physical Society
2002-06-01
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| Series: | Physical Review Special Topics. Accelerators and Beams |
| Online Access: | http://doi.org/10.1103/PhysRevSTAB.5.062001 |
| Summary: | We describe concepts for high power semiconductor rf switches, designed to handle signals at X-band with power level near 100 MW. We describe an abstract design methodology and derive a general scaling law for these switches. We also present a design and experimental work of a switch operating at the TE_{01} mode in overmoded circular waveguides. The switch is composed of an array of tee junction elements that have a p-i-n diode array window in the third arm. |
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| ISSN: | 1098-4402 |