Investigation on Threshold Voltage Adjustment of Threshold Switching Devices with HfO<sub>2</sub>/Al<sub>2</sub>O<sub>3</sub> Superlattice on Transparent ITO/Glass Substrate

Investigation on Threshold Voltage Adjustment of Threshold Switching Devices with HfO<sub>2</sub>/Al<sub>2</sub>O<sub>3</sub> Superlattice on Transparent ITO/Glass Substrate

Threshold voltage adjustment in threshold switching (TS) devices with HfO<sub>2</sub>/Al<sub>2</sub>O<sub>3</sub> superlattice (by means of changing the cycle ratio of HfO<sub>2</sub> to Al<sub>2</sub>O<sub>3</sub> in atomic lay...

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Bibliographic Details
Main Authors: Yejoo Choi, Jaemin Shin, Seungjun Moon, Changhwan Shin
Format: Article
Language:English
Published: MDPI AG 2020-05-01
Series:Micromachines
Subjects:
transparent device
indium tin oxide (ITO)
threshold switching device
multilayer
non-volatile memory
Online Access:https://www.mdpi.com/2072-666X/11/5/525

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https://www.mdpi.com/2072-666X/11/5/525

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