Low contact resistance of NiGe/p-Ge by indium segregation during Ni germanidation

Low contact resistance of NiGe/p-Ge by indium segregation during Ni germanidation

Herein, indium-doped p-type source/drain was introduced and the redistribution of indium (In) during the formation of a nickel germanide at the NiGe/Ge interface was characterized. Our results show that In segregates at the NiGe/p-Ge interface during Ni germanidation. The specific contact resistivit...

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Main Authors: M. Li, G. Shin, J. Lee, J. Oh, H.-D. Lee
Format: Article
Language:English
Published: AIP Publishing LLC 2018-06-01
Series:AIP Advances
Online Access:http://dx.doi.org/10.1063/1.5029858
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spelling doaj-104f86bbbd88405084f5f2f151453d152020-11-24T22:53:29ZengAIP Publishing LLCAIP Advances2158-32262018-06-0186065312065312-410.1063/1.5029858052806ADVLow contact resistance of NiGe/p-Ge by indium segregation during Ni germanidationM. Li0G. Shin1J. Lee2J. Oh3H.-D. Lee4Department of Electronics Engineering, Chungnam National University, Daejeon 305-764, KoreaDepartment of Electronics Engineering, Chungnam National University, Daejeon 305-764, KoreaDepartment of Electronics Engineering, Chungnam National University, Daejeon 305-764, KoreaSchool of Integrated Technology, Yonsei University, Incheon 406-840, KoreaDepartment of Electronics Engineering, Chungnam National University, Daejeon 305-764, KoreaHerein, indium-doped p-type source/drain was introduced and the redistribution of indium (In) during the formation of a nickel germanide at the NiGe/Ge interface was characterized. Our results show that In segregates at the NiGe/p-Ge interface during Ni germanidation. The specific contact resistivity, ρc between the NiGe and p-Ge layer, with a substantial low value of 4.04 × 10−8 Ωcm2 was obtained with the activation by rapid thermal annealing (RTA) at 650°C for 10 s. From this result, it can be concluded that Ge p-type metal–oxide–semiconductor field-effect transistors (Ge pMOSFETs) with low parasitic resistance source/drains could be realized by this In segregation.http://dx.doi.org/10.1063/1.5029858
collection DOAJ
language English
format Article
sources DOAJ
author M. Li
G. Shin
J. Lee
J. Oh
H.-D. Lee
spellingShingle M. Li
G. Shin
J. Lee
J. Oh
H.-D. Lee
Low contact resistance of NiGe/p-Ge by indium segregation during Ni germanidation
AIP Advances
author_facet M. Li
G. Shin
J. Lee
J. Oh
H.-D. Lee
author_sort M. Li
title Low contact resistance of NiGe/p-Ge by indium segregation during Ni germanidation
title_short Low contact resistance of NiGe/p-Ge by indium segregation during Ni germanidation
title_full Low contact resistance of NiGe/p-Ge by indium segregation during Ni germanidation
title_fullStr Low contact resistance of NiGe/p-Ge by indium segregation during Ni germanidation
title_full_unstemmed Low contact resistance of NiGe/p-Ge by indium segregation during Ni germanidation
title_sort low contact resistance of nige/p-ge by indium segregation during ni germanidation
publisher AIP Publishing LLC
series AIP Advances
issn 2158-3226
publishDate 2018-06-01
description Herein, indium-doped p-type source/drain was introduced and the redistribution of indium (In) during the formation of a nickel germanide at the NiGe/Ge interface was characterized. Our results show that In segregates at the NiGe/p-Ge interface during Ni germanidation. The specific contact resistivity, ρc between the NiGe and p-Ge layer, with a substantial low value of 4.04 × 10−8 Ωcm2 was obtained with the activation by rapid thermal annealing (RTA) at 650°C for 10 s. From this result, it can be concluded that Ge p-type metal–oxide–semiconductor field-effect transistors (Ge pMOSFETs) with low parasitic resistance source/drains could be realized by this In segregation.
url http://dx.doi.org/10.1063/1.5029858
work_keys_str_mv AT mli lowcontactresistanceofnigepgebyindiumsegregationduringnigermanidation
AT gshin lowcontactresistanceofnigepgebyindiumsegregationduringnigermanidation
AT jlee lowcontactresistanceofnigepgebyindiumsegregationduringnigermanidation
AT joh lowcontactresistanceofnigepgebyindiumsegregationduringnigermanidation
AT hdlee lowcontactresistanceofnigepgebyindiumsegregationduringnigermanidation
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