Room-Temperature H2 Gas Sensing Characterization of Graphene-Doped Porous Silicon via a Facile Solution Dropping Method

In this study, a graphene-doped porous silicon (G-doped/p-Si) substrate for low ppm H2 gas detection by an inexpensive synthesis route was proposed as a potential noble graphene-based gas sensor material, and to understand the sensing mechanism. The G-doped/p-Si gas sensor was synthesized by a simpl...

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Main Authors:	Nu Si A. Eom, Hong-Baek Cho, Yoseb Song, Woojin Lee, Tohru Sekino, Yong-Ho Choa
Format:	Article
Language:	English
Published:	MDPI AG 2017-11-01
Series:	Sensors
Subjects:	graphene-doped porous silicon p-type silicon hydrogen sensor sensing mechanism
Online Access:	https://www.mdpi.com/1424-8220/17/12/2750

id	doaj-0e8d48835d584c34854631e72c0ad938
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spelling	doaj-0e8d48835d584c34854631e72c0ad9382020-11-25T01:01:37ZengMDPI AGSensors1424-82202017-11-011712275010.3390/s17122750s17122750Room-Temperature H2 Gas Sensing Characterization of Graphene-Doped Porous Silicon via a Facile Solution Dropping MethodNu Si A. Eom0Hong-Baek Cho1Yoseb Song2Woojin Lee3Tohru Sekino4Yong-Ho Choa5Department of Fusion Chemical Engineering, Hanyang University, Ansan 15588, KoreaDepartment of Fusion Chemical Engineering, Hanyang University, Ansan 15588, KoreaDepartment of Fusion Chemical Engineering, Hanyang University, Ansan 15588, KoreaProcess Development Team, Semiconductor R&D Center, Samsung Electronics Co., Ltd., Samsungjeonja-ro 1, Hwaseong, Gyeonggi-do 445-330, KoreaThe Institute of Scientific and Industrial Research, Osaka University, 8-1 Mihogaoka, Ibaraki, Osaka 567-0047, JapanDepartment of Fusion Chemical Engineering, Hanyang University, Ansan 15588, KoreaIn this study, a graphene-doped porous silicon (G-doped/p-Si) substrate for low ppm H2 gas detection by an inexpensive synthesis route was proposed as a potential noble graphene-based gas sensor material, and to understand the sensing mechanism. The G-doped/p-Si gas sensor was synthesized by a simple capillary force-assisted solution dropping method on p-Si substrates, whose porosity was generated through an electrochemical etching process. G-doped/p-Si was fabricated with various graphene concentrations and exploited as a H2 sensor that was operated at room temperature. The sensing mechanism of the sensor with/without graphene decoration on p-Si was proposed to elucidate the synergetic gas sensing effect that is generated from the interface between the graphene and p-type silicon.https://www.mdpi.com/1424-8220/17/12/2750graphene-doped porous siliconp-type siliconhydrogen sensorsensing mechanism
collection	DOAJ
language	English
format	Article
sources	DOAJ
author	Nu Si A. Eom Hong-Baek Cho Yoseb Song Woojin Lee Tohru Sekino Yong-Ho Choa
spellingShingle	Nu Si A. Eom Hong-Baek Cho Yoseb Song Woojin Lee Tohru Sekino Yong-Ho Choa Room-Temperature H2 Gas Sensing Characterization of Graphene-Doped Porous Silicon via a Facile Solution Dropping Method Sensors graphene-doped porous silicon p-type silicon hydrogen sensor sensing mechanism
author_facet	Nu Si A. Eom Hong-Baek Cho Yoseb Song Woojin Lee Tohru Sekino Yong-Ho Choa
author_sort	Nu Si A. Eom
title	Room-Temperature H2 Gas Sensing Characterization of Graphene-Doped Porous Silicon via a Facile Solution Dropping Method
title_short	Room-Temperature H2 Gas Sensing Characterization of Graphene-Doped Porous Silicon via a Facile Solution Dropping Method
title_full	Room-Temperature H2 Gas Sensing Characterization of Graphene-Doped Porous Silicon via a Facile Solution Dropping Method
title_fullStr	Room-Temperature H2 Gas Sensing Characterization of Graphene-Doped Porous Silicon via a Facile Solution Dropping Method
title_full_unstemmed	Room-Temperature H2 Gas Sensing Characterization of Graphene-Doped Porous Silicon via a Facile Solution Dropping Method
title_sort	room-temperature h2 gas sensing characterization of graphene-doped porous silicon via a facile solution dropping method
publisher	MDPI AG
series	Sensors
issn	1424-8220
publishDate	2017-11-01
description	In this study, a graphene-doped porous silicon (G-doped/p-Si) substrate for low ppm H2 gas detection by an inexpensive synthesis route was proposed as a potential noble graphene-based gas sensor material, and to understand the sensing mechanism. The G-doped/p-Si gas sensor was synthesized by a simple capillary force-assisted solution dropping method on p-Si substrates, whose porosity was generated through an electrochemical etching process. G-doped/p-Si was fabricated with various graphene concentrations and exploited as a H2 sensor that was operated at room temperature. The sensing mechanism of the sensor with/without graphene decoration on p-Si was proposed to elucidate the synergetic gas sensing effect that is generated from the interface between the graphene and p-type silicon.
topic	graphene-doped porous silicon p-type silicon hydrogen sensor sensing mechanism
url	https://www.mdpi.com/1424-8220/17/12/2750
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Room-Temperature H2 Gas Sensing Characterization of Graphene-Doped Porous Silicon via a Facile Solution Dropping Method

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