The Investigation of Hybrid PEDOT:PSS/β-Ga2O3 Deep Ultraviolet Schottky Barrier Photodetectors

• Main Authors: Tao Zhang, Yixian Shen, Qian Feng, Xusheng Tian, Yuncong Cai, Zhuangzhuang Hu, Guangshuo Yan, Zhaoqing Feng, Yachao Zhang, Jing Ning, Yongkuan Xu, Xiaozheng Lian, Xiaojuan Sun, Chunfu Zhang, Hong Zhou, Jincheng Zhang, Yue Hao
• Format: Article
• Language: English
• Published: SpringerOpen 2020-08-01
• Series: Nanoscale Research Letters
• Subjects: β-Ga2O3; PEDOT:PSS; Hybrid Schottky diodes; Photodetector
• Online Access: http://link.springer.com/article/10.1186/s11671-020-03397-8

Abstract In this paper, the hybrid β-Ga2O3 Schottky diodes were fabricated with PEDOT:PSS as the anode. The electrical characteristics were investigated when the temperature changes from 298 K to 423 K. The barrier height ϕ b increases, and the ideality factor n decreases as the temperature increases, indicating the presence of barrier height inhomogeneity between the polymer and β-Ga2O3 interface. The mean barrier height and the standard deviation are 1.57 eV and 0.212 eV, respectively, after taking the Gaussian barrier height distribution model into account. Moreover, a relatively fast response speed of less than 320 ms, high reponsivity of 0.6 A/W, and rejection ratio of R 254 nm/R 400 nm up to 1.26 × 103 are obtained, suggesting that the hybrid PEDOT:PSS/β-Ga2O3 Schottky barrier diodes can be used as deep ultraviolet (DUV) optical switches or photodetectors.