Tuning Electronic Properties of Blue Phosphorene/Graphene-Like GaN van der Waals Heterostructures by Vertical External Electric Field

Abstract The structural and electronic properties of a monolayer and bilayer blue phosphorene/graphene-like GaN van der Waals heterostructures are studied using first-principle calculations. The results show that the monolayer-blue phosphorene/graphene-like GaN heterostructure is an indirect bandgap...

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Main Authors:	Jingjing Guo, Zhongpo Zhou, Hengheng Li, Haiying Wang, Chang Liu
Format:	Article
Language:	English
Published:	SpringerOpen 2019-05-01
Series:	Nanoscale Research Letters
Subjects:	Heterostructure Blue phosphorene Graphene-like GaN External electric field Electronic properties
Online Access:	http://link.springer.com/article/10.1186/s11671-019-2999-6

id	doaj-0dc54f2f408d44508fc37f801bf40dd6
record_format	Article
spelling	doaj-0dc54f2f408d44508fc37f801bf40dd62020-11-25T03:25:15ZengSpringerOpenNanoscale Research Letters1931-75731556-276X2019-05-011411710.1186/s11671-019-2999-6Tuning Electronic Properties of Blue Phosphorene/Graphene-Like GaN van der Waals Heterostructures by Vertical External Electric FieldJingjing Guo0Zhongpo Zhou1Hengheng Li2Haiying Wang3Chang Liu4Henan Key Laboratory of Photovoltaic Materials, and School of Physics and Materials Science, Henan Normal UniversityHenan Key Laboratory of Photovoltaic Materials, and School of Physics and Materials Science, Henan Normal UniversityHenan Key Laboratory of Photovoltaic Materials, and School of Physics and Materials Science, Henan Normal UniversityHenan Key Laboratory of Photovoltaic Materials, and School of Physics and Materials Science, Henan Normal UniversityKey Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, and School of Physics and Technology, Wuhan UniversityAbstract The structural and electronic properties of a monolayer and bilayer blue phosphorene/graphene-like GaN van der Waals heterostructures are studied using first-principle calculations. The results show that the monolayer-blue phosphorene/graphene-like GaN heterostructure is an indirect bandgap semiconductor with intrinsic type II band alignment. More importantly, the external electric field tunes the bandgap of monolayer-blue phosphorene/graphene-like GaN and bilayer-blue phosphorene/graphene-like GaN, and the relationship between bandgap and external electric field indicates a Stark effect. The semiconductor-to-metal transition is observed in the presence of a strong electric field.http://link.springer.com/article/10.1186/s11671-019-2999-6HeterostructureBlue phosphoreneGraphene-like GaNExternal electric fieldElectronic properties
collection	DOAJ
language	English
format	Article
sources	DOAJ
author	Jingjing Guo Zhongpo Zhou Hengheng Li Haiying Wang Chang Liu
spellingShingle	Jingjing Guo Zhongpo Zhou Hengheng Li Haiying Wang Chang Liu Tuning Electronic Properties of Blue Phosphorene/Graphene-Like GaN van der Waals Heterostructures by Vertical External Electric Field Nanoscale Research Letters Heterostructure Blue phosphorene Graphene-like GaN External electric field Electronic properties
author_facet	Jingjing Guo Zhongpo Zhou Hengheng Li Haiying Wang Chang Liu
author_sort	Jingjing Guo
title	Tuning Electronic Properties of Blue Phosphorene/Graphene-Like GaN van der Waals Heterostructures by Vertical External Electric Field
title_short	Tuning Electronic Properties of Blue Phosphorene/Graphene-Like GaN van der Waals Heterostructures by Vertical External Electric Field
title_full	Tuning Electronic Properties of Blue Phosphorene/Graphene-Like GaN van der Waals Heterostructures by Vertical External Electric Field
title_fullStr	Tuning Electronic Properties of Blue Phosphorene/Graphene-Like GaN van der Waals Heterostructures by Vertical External Electric Field
title_full_unstemmed	Tuning Electronic Properties of Blue Phosphorene/Graphene-Like GaN van der Waals Heterostructures by Vertical External Electric Field
title_sort	tuning electronic properties of blue phosphorene/graphene-like gan van der waals heterostructures by vertical external electric field
publisher	SpringerOpen
series	Nanoscale Research Letters
issn	1931-7573 1556-276X
publishDate	2019-05-01
description	Abstract The structural and electronic properties of a monolayer and bilayer blue phosphorene/graphene-like GaN van der Waals heterostructures are studied using first-principle calculations. The results show that the monolayer-blue phosphorene/graphene-like GaN heterostructure is an indirect bandgap semiconductor with intrinsic type II band alignment. More importantly, the external electric field tunes the bandgap of monolayer-blue phosphorene/graphene-like GaN and bilayer-blue phosphorene/graphene-like GaN, and the relationship between bandgap and external electric field indicates a Stark effect. The semiconductor-to-metal transition is observed in the presence of a strong electric field.
topic	Heterostructure Blue phosphorene Graphene-like GaN External electric field Electronic properties
url	http://link.springer.com/article/10.1186/s11671-019-2999-6
work_keys_str_mv	AT jingjingguo tuningelectronicpropertiesofbluephosphorenegraphenelikeganvanderwaalsheterostructuresbyverticalexternalelectricfield AT zhongpozhou tuningelectronicpropertiesofbluephosphorenegraphenelikeganvanderwaalsheterostructuresbyverticalexternalelectricfield AT henghengli tuningelectronicpropertiesofbluephosphorenegraphenelikeganvanderwaalsheterostructuresbyverticalexternalelectricfield AT haiyingwang tuningelectronicpropertiesofbluephosphorenegraphenelikeganvanderwaalsheterostructuresbyverticalexternalelectricfield AT changliu tuningelectronicpropertiesofbluephosphorenegraphenelikeganvanderwaalsheterostructuresbyverticalexternalelectricfield
_version_	1724598051432038400

Tuning Electronic Properties of Blue Phosphorene/Graphene-Like GaN van der Waals Heterostructures by Vertical External Electric Field

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