Influence of intrinsic point defects and substitutional impurities (Cl, I-S) on the electronic structure of 2H-SnS2

Influence of intrinsic point defects and substitutional impurities (Cl, I-S) on the electronic structure of 2H-SnS2

It was performed the systematic investigation of chemical modification regularities of electronic structure at the composition changes of “ideal” 2H-SnS 2 crystal by using the self-consistent density functional theory method in the supercell model. It were analyzed the phases obtained during doping...

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Bibliographic Details
Main Authors: D.I. Bletskan, V.V. Frolova
Format: Article
Language:English
Published: National Academy of Sciences of Ukraine. Institute of Semi conductor physics. 2018-12-01
Series:Semiconductor Physics, Quantum Electronics & Optoelectronics
Subjects:
tin disulfide
electronic structure
density of states
intrinsic and extrinsic point defects
photoconductivity
Online Access:http://journal-spqeo.org.ua/n4_2018/P345-359abstr.html

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