Effect of Graded-Indium-Content Superlattice on the Optical and Structural Properties of Yellow-Emitting InGaN/GaN Quantum Wells

Effect of Graded-Indium-Content Superlattice on the Optical and Structural Properties of Yellow-Emitting InGaN/GaN Quantum Wells

We have improved the material quality of the high indium composition InGaN/GaN multiple quantum wells (MQWs) grown on free-standing GaN substrates using the graded-indium-content superlattice. We found that by adopting a graded-indium-content superlattice structure, the spectral FWHM of the yellow e...

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Main Authors: Xuan Li, Jianping Liu, Xujun Su, Siyi Huang, Aiqin Tian, Wei Zhou, Lingrong Jiang, Masao Ikeda, Hui Yang
Format: Article
Language:English
Published: MDPI AG 2021-04-01
Series:Materials
Subjects:
GaN
superlattice
InGaN
multiple quantum wells
Online Access:https://www.mdpi.com/1996-1944/14/8/1877
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spelling doaj-0d9da070a02d48d78b4c2761fe0f9b392021-04-09T23:05:50ZengMDPI AGMaterials1996-19442021-04-01141877187710.3390/ma14081877Effect of Graded-Indium-Content Superlattice on the Optical and Structural Properties of Yellow-Emitting InGaN/GaN Quantum WellsXuan Li0Jianping Liu1Xujun Su2Siyi Huang3Aiqin Tian4Wei Zhou5Lingrong Jiang6Masao Ikeda7Hui Yang8Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123, ChinaSuzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123, ChinaSuzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123, ChinaSuzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123, ChinaSuzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123, ChinaSuzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123, ChinaSuzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123, ChinaSuzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123, ChinaSuzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123, ChinaWe have improved the material quality of the high indium composition InGaN/GaN multiple quantum wells (MQWs) grown on free-standing GaN substrates using the graded-indium-content superlattice. We found that by adopting a graded-indium-content superlattice structure, the spectral FWHM of the yellow emitting InGaN/GaN MQW was reduced from 181 meV to 160 meV, and the non-radiative recombination lifetime increased from 13 ns to 44 ns. Besides, the graded-indium-content superlattice can mitigate strain relaxation in high indium composition MQWs as shown by the TEM diffraction patterns.https://www.mdpi.com/1996-1944/14/8/1877GaNsuperlatticeInGaNmultiple quantum wells
collection DOAJ
language English
format Article
sources DOAJ
author Xuan Li
Jianping Liu
Xujun Su
Siyi Huang
Aiqin Tian
Wei Zhou
Lingrong Jiang
Masao Ikeda
Hui Yang
spellingShingle Xuan Li
Jianping Liu
Xujun Su
Siyi Huang
Aiqin Tian
Wei Zhou
Lingrong Jiang
Masao Ikeda
Hui Yang
Effect of Graded-Indium-Content Superlattice on the Optical and Structural Properties of Yellow-Emitting InGaN/GaN Quantum Wells
Materials
GaN
superlattice
InGaN
multiple quantum wells
author_facet Xuan Li
Jianping Liu
Xujun Su
Siyi Huang
Aiqin Tian
Wei Zhou
Lingrong Jiang
Masao Ikeda
Hui Yang
author_sort Xuan Li
title Effect of Graded-Indium-Content Superlattice on the Optical and Structural Properties of Yellow-Emitting InGaN/GaN Quantum Wells
title_short Effect of Graded-Indium-Content Superlattice on the Optical and Structural Properties of Yellow-Emitting InGaN/GaN Quantum Wells
title_full Effect of Graded-Indium-Content Superlattice on the Optical and Structural Properties of Yellow-Emitting InGaN/GaN Quantum Wells
title_fullStr Effect of Graded-Indium-Content Superlattice on the Optical and Structural Properties of Yellow-Emitting InGaN/GaN Quantum Wells
title_full_unstemmed Effect of Graded-Indium-Content Superlattice on the Optical and Structural Properties of Yellow-Emitting InGaN/GaN Quantum Wells
title_sort effect of graded-indium-content superlattice on the optical and structural properties of yellow-emitting ingan/gan quantum wells
publisher MDPI AG
series Materials
issn 1996-1944
publishDate 2021-04-01
description We have improved the material quality of the high indium composition InGaN/GaN multiple quantum wells (MQWs) grown on free-standing GaN substrates using the graded-indium-content superlattice. We found that by adopting a graded-indium-content superlattice structure, the spectral FWHM of the yellow emitting InGaN/GaN MQW was reduced from 181 meV to 160 meV, and the non-radiative recombination lifetime increased from 13 ns to 44 ns. Besides, the graded-indium-content superlattice can mitigate strain relaxation in high indium composition MQWs as shown by the TEM diffraction patterns.
topic GaN
superlattice
InGaN
multiple quantum wells
url https://www.mdpi.com/1996-1944/14/8/1877
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AT jianpingliu effectofgradedindiumcontentsuperlatticeontheopticalandstructuralpropertiesofyellowemittinginganganquantumwells
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