Adjoint method for the optimization of insulated gate bipolar transistors
A mathematical algorithm is presented for the computation of optimum doping profiles that maximize the breakdown voltage and on-state current in insulated gate bipolar transistors (IGBT). The algorithm is based on the evaluation of doping sensitivity functions, which are defined as the functional de...
| Main Authors: | , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2019-09-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/1.5113764 |