UVB LEDs Grown by Molecular Beam Epitaxy Using AlGaN Quantum Dots

UVB LEDs Grown by Molecular Beam Epitaxy Using AlGaN Quantum Dots

AlGaN based light emitting diodes (LEDs) will play a key role for the development of applications in the ultra-violet (UV). In the UVB region (280–320 nm), phototherapy and plant lighting are among the targeted uses. However, UVB LED performances still need to be improved to reach commercial markets...

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Bibliographic Details
Main Authors: Julien Brault, Mohamed Al Khalfioui, Samuel Matta, Thi Huong Ngo, Sébastien Chenot, Mathieu Leroux, Pierre Valvin, Bernard Gil
Format: Article
Language:English
Published: MDPI AG 2020-11-01
Series:Crystals
Subjects:
light emitting diodes
ultra-violet emission
molecular beam epitaxy
AlGaN
quantum dots
internal quantum efficiency
Online Access:https://www.mdpi.com/2073-4352/10/12/1097

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