A Proposal of Vertical MOSFET and Electrothermal Analysis for Monolithic 3-D ICs

A Proposal of Vertical MOSFET and Electrothermal Analysis for Monolithic 3-D ICs

In this paper, an innovative vertical MOSFET based on through-oxide via (TOV) technology is proposed for silicon-on-insulator (SOI)-based monolithic 3-D ICs. The proposed vertical MOSFET is investigated numerically. It was found that SOI can effectively reduce the parasitic capacitance, leakage curr...

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Bibliographic Details
Main Authors: Jia-He Zhu, Da-Wei Wang, Wen-Sheng Zhao, Jia-Yun Dai, Gaofeng Wang
Format: Article
Language:English
Published: MDPI AG 2021-09-01
Series:Electronics
Subjects:
vertical MOSFET
through-oxide-via
silicon-on-insulator
electrothermal simulation
self-heating effect
Online Access:https://www.mdpi.com/2079-9292/10/18/2241

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