Ways to Improve Speed GaAs-Transistor Schottky and Selective Doped Heterotranzystors for the Formation of Modern Microwave Circuits
There is no doubt that the use of technology with field-effect transistors on GaAs Schottky to form a high-speed LSI has a great future. No fewer prospects facing unique in its properties SLHT - technology for the design of modern LSI / VLSI. In the case of SLHT can satisfy three main technological...
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Vasyl Stefanyk Precarpathian National University
2016-10-01
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| Series: | Фізика і хімія твердого тіла |
| Online Access: | http://journals.pu.if.ua/index.php/pcss/article/view/772 |
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doaj-0bef04be6d1c460883e31ab40130971a2020-11-25T02:21:14ZengVasyl Stefanyk Precarpathian National UniversityФізика і хімія твердого тіла1729-44282309-85892016-10-0116241341910.15330/pcss.16.2.413-419641Ways to Improve Speed GaAs-Transistor Schottky and Selective Doped Heterotranzystors for the Formation of Modern Microwave CircuitsS. P. Novosyadlyy0I. M. Lutskiy1Vasyl Stefanyk Precarpathian National UniversityVasyl Stefanyk Precarpathian National UniversityThere is no doubt that the use of technology with field-effect transistors on GaAs Schottky to form a high-speed LSI has a great future. No fewer prospects facing unique in its properties SLHT - technology for the design of modern LSI / VLSI. In the case of SLHT can satisfy three main technological criteria: performance, low power consumption and hichnist technological and manufacturing process of complex structures BIShttp://journals.pu.if.ua/index.php/pcss/article/view/772 |
| collection |
DOAJ |
| language |
English |
| format |
Article |
| sources |
DOAJ |
| author |
S. P. Novosyadlyy I. M. Lutskiy |
| spellingShingle |
S. P. Novosyadlyy I. M. Lutskiy Ways to Improve Speed GaAs-Transistor Schottky and Selective Doped Heterotranzystors for the Formation of Modern Microwave Circuits Фізика і хімія твердого тіла |
| author_facet |
S. P. Novosyadlyy I. M. Lutskiy |
| author_sort |
S. P. Novosyadlyy |
| title |
Ways to Improve Speed GaAs-Transistor Schottky and Selective Doped Heterotranzystors for the Formation of Modern Microwave Circuits |
| title_short |
Ways to Improve Speed GaAs-Transistor Schottky and Selective Doped Heterotranzystors for the Formation of Modern Microwave Circuits |
| title_full |
Ways to Improve Speed GaAs-Transistor Schottky and Selective Doped Heterotranzystors for the Formation of Modern Microwave Circuits |
| title_fullStr |
Ways to Improve Speed GaAs-Transistor Schottky and Selective Doped Heterotranzystors for the Formation of Modern Microwave Circuits |
| title_full_unstemmed |
Ways to Improve Speed GaAs-Transistor Schottky and Selective Doped Heterotranzystors for the Formation of Modern Microwave Circuits |
| title_sort |
ways to improve speed gaas-transistor schottky and selective doped heterotranzystors for the formation of modern microwave circuits |
| publisher |
Vasyl Stefanyk Precarpathian National University |
| series |
Фізика і хімія твердого тіла |
| issn |
1729-4428 2309-8589 |
| publishDate |
2016-10-01 |
| description |
There is no doubt that the use of technology with field-effect transistors on GaAs Schottky to form a high-speed LSI has a great future. No fewer prospects facing unique in its properties SLHT - technology for the design of modern LSI / VLSI. In the case of SLHT can satisfy three main technological criteria: performance, low power consumption and hichnist technological and manufacturing process of complex structures BIS |
| url |
http://journals.pu.if.ua/index.php/pcss/article/view/772 |
| work_keys_str_mv |
AT spnovosyadlyy waystoimprovespeedgaastransistorschottkyandselectivedopedheterotranzystorsfortheformationofmodernmicrowavecircuits AT imlutskiy waystoimprovespeedgaastransistorschottkyandselectivedopedheterotranzystorsfortheformationofmodernmicrowavecircuits |
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