Ways to Improve Speed GaAs-Transistor Schottky and Selective Doped Heterotranzystors for the Formation of Modern Microwave Circuits
There is no doubt that the use of technology with field-effect transistors on GaAs Schottky to form a high-speed LSI has a great future. No fewer prospects facing unique in its properties SLHT - technology for the design of modern LSI / VLSI. In the case of SLHT can satisfy three main technological...
| Main Authors: | , |
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| Format: | Article |
| Language: | English |
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Vasyl Stefanyk Precarpathian National University
2016-10-01
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| Series: | Фізика і хімія твердого тіла |
| Online Access: | http://journals.pu.if.ua/index.php/pcss/article/view/772 |
| Summary: | There is no doubt that the use of technology with field-effect transistors on GaAs Schottky to form a high-speed LSI has a great future. No fewer prospects facing unique in its properties SLHT - technology for the design of modern LSI / VLSI. In the case of SLHT can satisfy three main technological criteria: performance, low power consumption and hichnist technological and manufacturing process of complex structures BIS |
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| ISSN: | 1729-4428 2309-8589 |