Carbon nanotube-based van der Waals heterojunction electrodes for high-performance intrinsically stretchable organic photoelectric transistors

Intrinsically stretchable organic field-effect transistors (STOFETs) that behave much like skin, have garnered widespread attention and demonstrated potential to more comfortable wearing electronics. Despite considerable efforts being exerted in stretchable hybrid polymeric semiconductors to achieve...

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Main Authors: Kai Liu, Yangshuang Bian, Junhua Kuang, Qingyuan Li, Yanwei Liu, Wei Shi, Zhiyuan Zhao, Xin Huang, Zhiheng Zhu, Yunlong Guo, Yunqi Liu
Format: Article
Language:English
Published: Elsevier 2021-08-01
Series:Giant
Subjects:
Online Access:http://www.sciencedirect.com/science/article/pii/S2666542521000163
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record_format Article
collection DOAJ
language English
format Article
sources DOAJ
author Kai Liu
Yangshuang Bian
Junhua Kuang
Qingyuan Li
Yanwei Liu
Wei Shi
Zhiyuan Zhao
Xin Huang
Zhiheng Zhu
Yunlong Guo
Yunqi Liu
spellingShingle Kai Liu
Yangshuang Bian
Junhua Kuang
Qingyuan Li
Yanwei Liu
Wei Shi
Zhiyuan Zhao
Xin Huang
Zhiheng Zhu
Yunlong Guo
Yunqi Liu
Carbon nanotube-based van der Waals heterojunction electrodes for high-performance intrinsically stretchable organic photoelectric transistors
Giant
Carbon nanotubes
Heterojunction electrode
van der Waals contact
Stretchable organic field-effect transistor
Stretchable organic phototransistor
author_facet Kai Liu
Yangshuang Bian
Junhua Kuang
Qingyuan Li
Yanwei Liu
Wei Shi
Zhiyuan Zhao
Xin Huang
Zhiheng Zhu
Yunlong Guo
Yunqi Liu
author_sort Kai Liu
title Carbon nanotube-based van der Waals heterojunction electrodes for high-performance intrinsically stretchable organic photoelectric transistors
title_short Carbon nanotube-based van der Waals heterojunction electrodes for high-performance intrinsically stretchable organic photoelectric transistors
title_full Carbon nanotube-based van der Waals heterojunction electrodes for high-performance intrinsically stretchable organic photoelectric transistors
title_fullStr Carbon nanotube-based van der Waals heterojunction electrodes for high-performance intrinsically stretchable organic photoelectric transistors
title_full_unstemmed Carbon nanotube-based van der Waals heterojunction electrodes for high-performance intrinsically stretchable organic photoelectric transistors
title_sort carbon nanotube-based van der waals heterojunction electrodes for high-performance intrinsically stretchable organic photoelectric transistors
publisher Elsevier
series Giant
issn 2666-5425
publishDate 2021-08-01
description Intrinsically stretchable organic field-effect transistors (STOFETs) that behave much like skin, have garnered widespread attention and demonstrated potential to more comfortable wearing electronics. Despite considerable efforts being exerted in stretchable hybrid polymeric semiconductors to achieve high-mobility and high-stretchability STOFETs, carbon nanotubes (CNTs) as ideal electrode materials, its interfacial quality seldom attracts research interests. Herein, we demonstrate a novel and general strategy on flexible CNT-based heterojunction electrodes by pentacene modification layer to enable high-performance and functional STOFETs. Pentacene transition layer can reduce the surface roughness and tune the heterogeneity of functional groups on the CNT thin film, as well as enhance the compatibility and van der Waals contact between CNT electrodes and organic semiconductors. The experimental results reveal that the carrier mobility of the resulting STOFETs increases by 2-3 times and the subthreshold slope decreases by 5 times compared with unmodified devices. The on-current/off-current ratio reaches nearly 107, which is approximately 1000 times as high as unmodified devices, and the highest value for stretchable organic transistors reported so far. Furthermore, STOFETs with heterojunction electrodes demonstrate better performance homogeneity and higher strain-independent capability. Noteworthy, these are the first intrinsically stretchable organic phototransistors (STOPTs) with superior photoswitching performances and high strain tolerance developed.
topic Carbon nanotubes
Heterojunction electrode
van der Waals contact
Stretchable organic field-effect transistor
Stretchable organic phototransistor
url http://www.sciencedirect.com/science/article/pii/S2666542521000163
work_keys_str_mv AT kailiu carbonnanotubebasedvanderwaalsheterojunctionelectrodesforhighperformanceintrinsicallystretchableorganicphotoelectrictransistors
AT yangshuangbian carbonnanotubebasedvanderwaalsheterojunctionelectrodesforhighperformanceintrinsicallystretchableorganicphotoelectrictransistors
AT junhuakuang carbonnanotubebasedvanderwaalsheterojunctionelectrodesforhighperformanceintrinsicallystretchableorganicphotoelectrictransistors
AT qingyuanli carbonnanotubebasedvanderwaalsheterojunctionelectrodesforhighperformanceintrinsicallystretchableorganicphotoelectrictransistors
AT yanweiliu carbonnanotubebasedvanderwaalsheterojunctionelectrodesforhighperformanceintrinsicallystretchableorganicphotoelectrictransistors
AT weishi carbonnanotubebasedvanderwaalsheterojunctionelectrodesforhighperformanceintrinsicallystretchableorganicphotoelectrictransistors
AT zhiyuanzhao carbonnanotubebasedvanderwaalsheterojunctionelectrodesforhighperformanceintrinsicallystretchableorganicphotoelectrictransistors
AT xinhuang carbonnanotubebasedvanderwaalsheterojunctionelectrodesforhighperformanceintrinsicallystretchableorganicphotoelectrictransistors
AT zhihengzhu carbonnanotubebasedvanderwaalsheterojunctionelectrodesforhighperformanceintrinsicallystretchableorganicphotoelectrictransistors
AT yunlongguo carbonnanotubebasedvanderwaalsheterojunctionelectrodesforhighperformanceintrinsicallystretchableorganicphotoelectrictransistors
AT yunqiliu carbonnanotubebasedvanderwaalsheterojunctionelectrodesforhighperformanceintrinsicallystretchableorganicphotoelectrictransistors
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spelling doaj-0b37c4fb327e438b999b62fd738810f42021-08-10T04:05:15ZengElsevierGiant2666-54252021-08-017100060Carbon nanotube-based van der Waals heterojunction electrodes for high-performance intrinsically stretchable organic photoelectric transistorsKai Liu0Yangshuang Bian1Junhua Kuang2Qingyuan Li3Yanwei Liu4Wei Shi5Zhiyuan Zhao6Xin Huang7Zhiheng Zhu8Yunlong Guo9Yunqi Liu10Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry Chinese Academy of Sciences, Beijing 100190, China; School of Chemistry and Chemical Engineering, University of Chinese Academy of Sciences, Beijing 100049, ChinaBeijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry Chinese Academy of Sciences, Beijing 100190, China; School of Chemistry and Chemical Engineering, University of Chinese Academy of Sciences, Beijing 100049, ChinaBeijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry Chinese Academy of Sciences, Beijing 100190, China; School of Chemistry and Chemical Engineering, University of Chinese Academy of Sciences, Beijing 100049, ChinaBeijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry Chinese Academy of Sciences, Beijing 100190, China; School of Chemistry and Chemical Engineering, University of Chinese Academy of Sciences, Beijing 100049, ChinaBeijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry Chinese Academy of Sciences, Beijing 100190, China; School of Chemistry and Chemical Engineering, University of Chinese Academy of Sciences, Beijing 100049, ChinaBeijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry Chinese Academy of Sciences, Beijing 100190, China; School of Chemistry and Chemical Engineering, University of Chinese Academy of Sciences, Beijing 100049, ChinaBeijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry Chinese Academy of Sciences, Beijing 100190, China; School of Chemistry and Chemical Engineering, University of Chinese Academy of Sciences, Beijing 100049, ChinaBeijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry Chinese Academy of Sciences, Beijing 100190, China; School of Chemistry and Chemical Engineering, University of Chinese Academy of Sciences, Beijing 100049, ChinaBeijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry Chinese Academy of Sciences, Beijing 100190, China; School of Chemistry and Chemical Engineering, University of Chinese Academy of Sciences, Beijing 100049, ChinaBeijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry Chinese Academy of Sciences, Beijing 100190, China; School of Chemistry and Chemical Engineering, University of Chinese Academy of Sciences, Beijing 100049, China; Corresponding author.Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry Chinese Academy of Sciences, Beijing 100190, China; School of Chemistry and Chemical Engineering, University of Chinese Academy of Sciences, Beijing 100049, ChinaIntrinsically stretchable organic field-effect transistors (STOFETs) that behave much like skin, have garnered widespread attention and demonstrated potential to more comfortable wearing electronics. Despite considerable efforts being exerted in stretchable hybrid polymeric semiconductors to achieve high-mobility and high-stretchability STOFETs, carbon nanotubes (CNTs) as ideal electrode materials, its interfacial quality seldom attracts research interests. Herein, we demonstrate a novel and general strategy on flexible CNT-based heterojunction electrodes by pentacene modification layer to enable high-performance and functional STOFETs. Pentacene transition layer can reduce the surface roughness and tune the heterogeneity of functional groups on the CNT thin film, as well as enhance the compatibility and van der Waals contact between CNT electrodes and organic semiconductors. The experimental results reveal that the carrier mobility of the resulting STOFETs increases by 2-3 times and the subthreshold slope decreases by 5 times compared with unmodified devices. The on-current/off-current ratio reaches nearly 107, which is approximately 1000 times as high as unmodified devices, and the highest value for stretchable organic transistors reported so far. Furthermore, STOFETs with heterojunction electrodes demonstrate better performance homogeneity and higher strain-independent capability. Noteworthy, these are the first intrinsically stretchable organic phototransistors (STOPTs) with superior photoswitching performances and high strain tolerance developed.http://www.sciencedirect.com/science/article/pii/S2666542521000163Carbon nanotubesHeterojunction electrodevan der Waals contactStretchable organic field-effect transistorStretchable organic phototransistor