Analysis of low frequency noise in in situ fluorine-doped ZnSnO thin-film transistors

Analysis of low frequency noise in in situ fluorine-doped ZnSnO thin-film transistors

We report on in situ fluorine-doped ZnSnO (ZTO:F) thin-film transistors (TFTs) fabricated by co-sputtering. The low frequency noise (LFN) characteristics of ZTO:F TFTs under different annealing temperatures and FSnO (FTO) deposition powers are comparatively studied for the first time. The results sh...

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Main Authors: Xuemei Yin, Yayi Chen, Guoyuan Li, Wei Zhong, Sunbin Deng, Lei Lu, Guijun Li, Hoi Sing Kwok, Rongsheng Chen
Format: Article
Language:English
Published: AIP Publishing LLC 2021-04-01
Series:AIP Advances
Online Access:http://dx.doi.org/10.1063/5.0048125
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spelling doaj-0b31034289f3483fadb02ca13b093e0c2021-05-04T14:07:18ZengAIP Publishing LLCAIP Advances2158-32262021-04-01114045326045326-510.1063/5.0048125Analysis of low frequency noise in in situ fluorine-doped ZnSnO thin-film transistorsXuemei Yin0Yayi Chen1Guoyuan Li2Wei Zhong3Sunbin Deng4Lei Lu5Guijun Li6Hoi Sing Kwok7Rongsheng Chen8School of Electronic and Information Engineering, South China University of Technology, Guangzhou 510640, ChinaSchool of Electronic and Information Engineering, South China University of Technology, Guangzhou 510640, ChinaSchool of Electronic and Information Engineering, South China University of Technology, Guangzhou 510640, ChinaSchool of Electronic and Information Engineering, South China University of Technology, Guangzhou 510640, ChinaState Key Laboratory of Advanced Displays and Optoelectronics Technologies, Department of Electronic and Computer Engineering, Hong Kong University of Science and Technology, Hong Kong, ChinaState Key Laboratory of Advanced Displays and Optoelectronics Technologies, Department of Electronic and Computer Engineering, Hong Kong University of Science and Technology, Hong Kong, ChinaCollege of Electronic Science and Technology, Shenzhen University, Shenzhen 518061, ChinaState Key Laboratory of Advanced Displays and Optoelectronics Technologies, Department of Electronic and Computer Engineering, Hong Kong University of Science and Technology, Hong Kong, ChinaSchool of Electronic and Information Engineering, South China University of Technology, Guangzhou 510640, ChinaWe report on in situ fluorine-doped ZnSnO (ZTO:F) thin-film transistors (TFTs) fabricated by co-sputtering. The low frequency noise (LFN) characteristics of ZTO:F TFTs under different annealing temperatures and FSnO (FTO) deposition powers are comparatively studied for the first time. The results show that ZTO:F TFTs have the best electrical and LFN characteristics under an FTO deposition power of 25 W and an annealing temperature of 350 °C, while the saturated field effect mobility was measured to be 14.0 cm2 V−1 s−1, the switching current ratio is over 109, and the Hooge parameter is about 10−2 without any passivation. ZTO:F TFTs without rare metals have the potential for low-cost and environmentally safe manufacturing.http://dx.doi.org/10.1063/5.0048125
collection DOAJ
language English
format Article
sources DOAJ
author Xuemei Yin
Yayi Chen
Guoyuan Li
Wei Zhong
Sunbin Deng
Lei Lu
Guijun Li
Hoi Sing Kwok
Rongsheng Chen
spellingShingle Xuemei Yin
Yayi Chen
Guoyuan Li
Wei Zhong
Sunbin Deng
Lei Lu
Guijun Li
Hoi Sing Kwok
Rongsheng Chen
Analysis of low frequency noise in in situ fluorine-doped ZnSnO thin-film transistors
AIP Advances
author_facet Xuemei Yin
Yayi Chen
Guoyuan Li
Wei Zhong
Sunbin Deng
Lei Lu
Guijun Li
Hoi Sing Kwok
Rongsheng Chen
author_sort Xuemei Yin
title Analysis of low frequency noise in in situ fluorine-doped ZnSnO thin-film transistors
title_short Analysis of low frequency noise in in situ fluorine-doped ZnSnO thin-film transistors
title_full Analysis of low frequency noise in in situ fluorine-doped ZnSnO thin-film transistors
title_fullStr Analysis of low frequency noise in in situ fluorine-doped ZnSnO thin-film transistors
title_full_unstemmed Analysis of low frequency noise in in situ fluorine-doped ZnSnO thin-film transistors
title_sort analysis of low frequency noise in in situ fluorine-doped znsno thin-film transistors
publisher AIP Publishing LLC
series AIP Advances
issn 2158-3226
publishDate 2021-04-01
description We report on in situ fluorine-doped ZnSnO (ZTO:F) thin-film transistors (TFTs) fabricated by co-sputtering. The low frequency noise (LFN) characteristics of ZTO:F TFTs under different annealing temperatures and FSnO (FTO) deposition powers are comparatively studied for the first time. The results show that ZTO:F TFTs have the best electrical and LFN characteristics under an FTO deposition power of 25 W and an annealing temperature of 350 °C, while the saturated field effect mobility was measured to be 14.0 cm2 V−1 s−1, the switching current ratio is over 109, and the Hooge parameter is about 10−2 without any passivation. ZTO:F TFTs without rare metals have the potential for low-cost and environmentally safe manufacturing.
url http://dx.doi.org/10.1063/5.0048125
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AT yayichen analysisoflowfrequencynoiseininsitufluorinedopedznsnothinfilmtransistors
AT guoyuanli analysisoflowfrequencynoiseininsitufluorinedopedznsnothinfilmtransistors
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AT leilu analysisoflowfrequencynoiseininsitufluorinedopedznsnothinfilmtransistors
AT guijunli analysisoflowfrequencynoiseininsitufluorinedopedznsnothinfilmtransistors
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