A Closed Form Analytical Model of Back-Gated 2-D Semiconductor Negative Capacitance Field Effect Transistors

A Closed Form Analytical Model of Back-Gated 2-D Semiconductor Negative Capacitance Field Effect Transistors

Steep slope (SS <; 60 mV/dec at room temperature) negative capacitance (NC) FETs, based on the 2-D transition metal dichalcogenide semiconductor channel materials, may have a promising future in low-power electronics because of their high on-state current and very high on/off ratio. In this p...

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Bibliographic Details
Main Authors: Chunsheng Jiang, Mengwei Si, Renrong Liang, Jun Xu, Peide D. Ye, Muhammad Ashraful Alam
Format: Article
Language:English
Published: IEEE 2018-01-01
Series:IEEE Journal of the Electron Devices Society
Subjects:
Negative capacitance
two-dimensional materials
analytical model
low-power application
Online Access:https://ieeexplore.ieee.org/document/8240927/

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