A Closed Form Analytical Model of Back-Gated 2-D Semiconductor Negative Capacitance Field Effect Transistors
Steep slope (SS <; 60 mV/dec at room temperature) negative capacitance (NC) FETs, based on the 2-D transition metal dichalcogenide semiconductor channel materials, may have a promising future in low-power electronics because of their high on-state current and very high on/off ratio. In this p...
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IEEE
2018-01-01
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| Series: | IEEE Journal of the Electron Devices Society |
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| Online Access: | https://ieeexplore.ieee.org/document/8240927/ |
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doaj-0b0c63bf889f463687e437d00fa753be2021-03-29T18:45:49ZengIEEEIEEE Journal of the Electron Devices Society2168-67342018-01-01618919410.1109/JEDS.2017.27871378240927A Closed Form Analytical Model of Back-Gated 2-D Semiconductor Negative Capacitance Field Effect TransistorsChunsheng Jiang0https://orcid.org/0000-0001-6350-9750Mengwei Si1https://orcid.org/0000-0003-0397-7741Renrong Liang2Jun Xu3Peide D. Ye4https://orcid.org/0000-0001-8466-9745Muhammad Ashraful Alam5https://orcid.org/0000-0001-8775-6043Tsinghua National Laboratory for Information Science and Technology, Institute of Microelectronics, Tsinghua University, Beijing, ChinaSchool of Electrical and Computer Engineering, Purdue University, West Lafayette, IN, USATsinghua National Laboratory for Information Science and Technology, Institute of Microelectronics, Tsinghua University, Beijing, ChinaTsinghua National Laboratory for Information Science and Technology, Institute of Microelectronics, Tsinghua University, Beijing, ChinaSchool of Electrical and Computer Engineering, Purdue University, West Lafayette, IN, USASchool of Electrical and Computer Engineering, Purdue University, West Lafayette, IN, USASteep slope (SS <; 60 mV/dec at room temperature) negative capacitance (NC) FETs, based on the 2-D transition metal dichalcogenide semiconductor channel materials, may have a promising future in low-power electronics because of their high on-state current and very high on/off ratio. In this paper, we develop an analytically compact drain current model for long-channel back-gated 2-D NC-FETs by solving the classical drift-diffusion equations. The equations describe the transition from depletion to accumulation regimes of operation as a continuous function of gate/drain voltages. The continuity ensures time-efficient simulation of large systems. Several key features of the model are verified by comparing with the experimental data. Specifically, the negative drain induced barrier lowering effect and negative differential resistance effect predicted by the model are successfully observed in our experiments.https://ieeexplore.ieee.org/document/8240927/Negative capacitancetwo-dimensional materialsanalytical modellow-power application |
| collection |
DOAJ |
| language |
English |
| format |
Article |
| sources |
DOAJ |
| author |
Chunsheng Jiang Mengwei Si Renrong Liang Jun Xu Peide D. Ye Muhammad Ashraful Alam |
| spellingShingle |
Chunsheng Jiang Mengwei Si Renrong Liang Jun Xu Peide D. Ye Muhammad Ashraful Alam A Closed Form Analytical Model of Back-Gated 2-D Semiconductor Negative Capacitance Field Effect Transistors IEEE Journal of the Electron Devices Society Negative capacitance two-dimensional materials analytical model low-power application |
| author_facet |
Chunsheng Jiang Mengwei Si Renrong Liang Jun Xu Peide D. Ye Muhammad Ashraful Alam |
| author_sort |
Chunsheng Jiang |
| title |
A Closed Form Analytical Model of Back-Gated 2-D Semiconductor Negative Capacitance Field Effect Transistors |
| title_short |
A Closed Form Analytical Model of Back-Gated 2-D Semiconductor Negative Capacitance Field Effect Transistors |
| title_full |
A Closed Form Analytical Model of Back-Gated 2-D Semiconductor Negative Capacitance Field Effect Transistors |
| title_fullStr |
A Closed Form Analytical Model of Back-Gated 2-D Semiconductor Negative Capacitance Field Effect Transistors |
| title_full_unstemmed |
A Closed Form Analytical Model of Back-Gated 2-D Semiconductor Negative Capacitance Field Effect Transistors |
| title_sort |
closed form analytical model of back-gated 2-d semiconductor negative capacitance field effect transistors |
| publisher |
IEEE |
| series |
IEEE Journal of the Electron Devices Society |
| issn |
2168-6734 |
| publishDate |
2018-01-01 |
| description |
Steep slope (SS <; 60 mV/dec at room temperature) negative capacitance (NC) FETs, based on the 2-D transition metal dichalcogenide semiconductor channel materials, may have a promising future in low-power electronics because of their high on-state current and very high on/off ratio. In this paper, we develop an analytically compact drain current model for long-channel back-gated 2-D NC-FETs by solving the classical drift-diffusion equations. The equations describe the transition from depletion to accumulation regimes of operation as a continuous function of gate/drain voltages. The continuity ensures time-efficient simulation of large systems. Several key features of the model are verified by comparing with the experimental data. Specifically, the negative drain induced barrier lowering effect and negative differential resistance effect predicted by the model are successfully observed in our experiments. |
| topic |
Negative capacitance two-dimensional materials analytical model low-power application |
| url |
https://ieeexplore.ieee.org/document/8240927/ |
| work_keys_str_mv |
AT chunshengjiang aclosedformanalyticalmodelofbackgated2dsemiconductornegativecapacitancefieldeffecttransistors AT mengweisi aclosedformanalyticalmodelofbackgated2dsemiconductornegativecapacitancefieldeffecttransistors AT renrongliang aclosedformanalyticalmodelofbackgated2dsemiconductornegativecapacitancefieldeffecttransistors AT junxu aclosedformanalyticalmodelofbackgated2dsemiconductornegativecapacitancefieldeffecttransistors AT peidedye aclosedformanalyticalmodelofbackgated2dsemiconductornegativecapacitancefieldeffecttransistors AT muhammadashrafulalam aclosedformanalyticalmodelofbackgated2dsemiconductornegativecapacitancefieldeffecttransistors AT chunshengjiang closedformanalyticalmodelofbackgated2dsemiconductornegativecapacitancefieldeffecttransistors AT mengweisi closedformanalyticalmodelofbackgated2dsemiconductornegativecapacitancefieldeffecttransistors AT renrongliang closedformanalyticalmodelofbackgated2dsemiconductornegativecapacitancefieldeffecttransistors AT junxu closedformanalyticalmodelofbackgated2dsemiconductornegativecapacitancefieldeffecttransistors AT peidedye closedformanalyticalmodelofbackgated2dsemiconductornegativecapacitancefieldeffecttransistors AT muhammadashrafulalam closedformanalyticalmodelofbackgated2dsemiconductornegativecapacitancefieldeffecttransistors |
| _version_ |
1724196447025364992 |