Microstructure Related Characterization of a-Si:H Thin Films PECVD Deposited under Varied Hydrogen Dilution

• Main Authors: Veronika Vavrunkova, Jarmila Mullerova, Pavel Sutta
• Format: Article
• Language: English
• Published: VSB-Technical University of Ostrava 2007-01-01
• Series: Advances in Electrical and Electronic Engineering
• Subjects: pecvd; hydrogen; si-h bonds.
• Online Access: http://advances.utc.sk/index.php/AEEE/article/view/164

We report on the structure and optical properties of hydrogenated silicon thin films deposited by plasma - enhanced chemical vapor deposition (PECVD) from silane diluted with hydrogen in a wide dilution range. The samples deposited with dilutions below 30 were detected as amorphous hydrogenated silicon (a-Si:H) with crystalline grains of several nanometers in size which represent the medium-range order of a-Si:H. The optical characterization confirmed increasing ordering with the increasing dilution. The optical band gap was observed to be increasing function of the dilution.