Carrier multiplication in van der Waals layered transition metal dichalcogenides

Carrier multiplication in van der Waals layered transition metal dichalcogenides

During carrier multiplication, high-energy free carriers in a given material relax by generation of additional electron-hole pairs. Here, the authors report evidence of carrier multiplication in multilayer MoTe2 and WSe2 films with up to 99% conversation efficiency.

Bibliographic Details
Main Authors: Ji-Hee Kim, Matthew R. Bergren, Jin Cheol Park, Subash Adhikari, Michael Lorke, Thomas Frauenheim, Duk-Hyun Choe, Beom Kim, Hyunyong Choi, Tom Gregorkiewicz, Young Hee Lee
Format: Article
Language:English
Published: Nature Publishing Group 2019-12-01
Series:Nature Communications
Online Access:https://doi.org/10.1038/s41467-019-13325-9
id doaj-0aa0200a81034578b05965a772f1e877
record_format Article
spelling doaj-0aa0200a81034578b05965a772f1e8772021-05-11T12:16:17ZengNature Publishing GroupNature Communications2041-17232019-12-011011910.1038/s41467-019-13325-9Carrier multiplication in van der Waals layered transition metal dichalcogenidesJi-Hee Kim0Matthew R. Bergren1Jin Cheol Park2Subash Adhikari3Michael Lorke4Thomas Frauenheim5Duk-Hyun Choe6Beom Kim7Hyunyong Choi8Tom Gregorkiewicz9Young Hee Lee10IBS Center for Integrated Nanostructure Physics (CINAP), Institute for Basic ScienceIBS Center for Integrated Nanostructure Physics (CINAP), Institute for Basic ScienceIBS Center for Integrated Nanostructure Physics (CINAP), Institute for Basic ScienceIBS Center for Integrated Nanostructure Physics (CINAP), Institute for Basic ScienceInstitut fur Theoretishe Physik, Universitat BremenBremen Center for Computational Materials Science, Institut fur Theoretische Physik, Universitat BremenInorganic Materials Lab, Samsung Advanced Institute of Technology (SAIT)School of Electrical and Electronic Engineering, Yonsei UniversityDepartment of Physics and Astronomy, Seoul National UniversityVan der Waals-Zeeman Institute, University of AmsterdamIBS Center for Integrated Nanostructure Physics (CINAP), Institute for Basic ScienceDuring carrier multiplication, high-energy free carriers in a given material relax by generation of additional electron-hole pairs. Here, the authors report evidence of carrier multiplication in multilayer MoTe2 and WSe2 films with up to 99% conversation efficiency.https://doi.org/10.1038/s41467-019-13325-9
collection DOAJ
language English
format Article
sources DOAJ
author Ji-Hee Kim
Matthew R. Bergren
Jin Cheol Park
Subash Adhikari
Michael Lorke
Thomas Frauenheim
Duk-Hyun Choe
Beom Kim
Hyunyong Choi
Tom Gregorkiewicz
Young Hee Lee
spellingShingle Ji-Hee Kim
Matthew R. Bergren
Jin Cheol Park
Subash Adhikari
Michael Lorke
Thomas Frauenheim
Duk-Hyun Choe
Beom Kim
Hyunyong Choi
Tom Gregorkiewicz
Young Hee Lee
Carrier multiplication in van der Waals layered transition metal dichalcogenides
Nature Communications
author_facet Ji-Hee Kim
Matthew R. Bergren
Jin Cheol Park
Subash Adhikari
Michael Lorke
Thomas Frauenheim
Duk-Hyun Choe
Beom Kim
Hyunyong Choi
Tom Gregorkiewicz
Young Hee Lee
author_sort Ji-Hee Kim
title Carrier multiplication in van der Waals layered transition metal dichalcogenides
title_short Carrier multiplication in van der Waals layered transition metal dichalcogenides
title_full Carrier multiplication in van der Waals layered transition metal dichalcogenides
title_fullStr Carrier multiplication in van der Waals layered transition metal dichalcogenides
title_full_unstemmed Carrier multiplication in van der Waals layered transition metal dichalcogenides
title_sort carrier multiplication in van der waals layered transition metal dichalcogenides
publisher Nature Publishing Group
series Nature Communications
issn 2041-1723
publishDate 2019-12-01
description During carrier multiplication, high-energy free carriers in a given material relax by generation of additional electron-hole pairs. Here, the authors report evidence of carrier multiplication in multilayer MoTe2 and WSe2 films with up to 99% conversation efficiency.
url https://doi.org/10.1038/s41467-019-13325-9
work_keys_str_mv AT jiheekim carriermultiplicationinvanderwaalslayeredtransitionmetaldichalcogenides
AT matthewrbergren carriermultiplicationinvanderwaalslayeredtransitionmetaldichalcogenides
AT jincheolpark carriermultiplicationinvanderwaalslayeredtransitionmetaldichalcogenides
AT subashadhikari carriermultiplicationinvanderwaalslayeredtransitionmetaldichalcogenides
AT michaellorke carriermultiplicationinvanderwaalslayeredtransitionmetaldichalcogenides
AT thomasfrauenheim carriermultiplicationinvanderwaalslayeredtransitionmetaldichalcogenides
AT dukhyunchoe carriermultiplicationinvanderwaalslayeredtransitionmetaldichalcogenides
AT beomkim carriermultiplicationinvanderwaalslayeredtransitionmetaldichalcogenides
AT hyunyongchoi carriermultiplicationinvanderwaalslayeredtransitionmetaldichalcogenides
AT tomgregorkiewicz carriermultiplicationinvanderwaalslayeredtransitionmetaldichalcogenides
AT youngheelee carriermultiplicationinvanderwaalslayeredtransitionmetaldichalcogenides
_version_ 1721445115734523904

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