INSULATED-GATE BIPOLAR TRANSISTOR FORMED IN THE BULK SILICON AND USING «SILICON ON INSULATOR» TECHNOLOGY

INSULATED-GATE BIPOLAR TRANSISTOR FORMED IN THE BULK SILICON AND USING «SILICON ON INSULATOR» TECHNOLOGY

The results of the optimization of design and technological parameters device structures insulated-gate bipolar transistor (IGBT), formed in bulk silicon and using «Silicon on Insulator» (SOI) technology are presented. The specific features of the functioning of various constructive solutions IGBT a...

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Bibliographic Details
Main Authors: S. Ibrahim, I. Yu. Lovshenko, V. R. Stempitsky
Format: Article
Language:Russian
Published: Educational institution «Belarusian State University of Informatics and Radioelectronics» 2019-06-01
Series:Doklady Belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki
Subjects:
isolated gate bipolar transistor
structure
manufacturing technology
static and dynamic characteristics
Online Access:https://doklady.bsuir.by/jour/article/view/822
Description
Summary:The results of the optimization of design and technological parameters device structures insulated-gate bipolar transistor (IGBT), formed in bulk silicon and using «Silicon on Insulator» (SOI) technology are presented. The specific features of the functioning of various constructive solutions IGBT are studied. A construction of SOI-IGBT structure with multiple gates, which allows a step change in the switched current, is suggested and investigated.
ISSN:1729-7648

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