Effect of Low-Concentration Rb<sup>+</sup> Mixing on Semiconductor Majority Charge Carriers Type of Perovskite Light-Absorption Layer by Using Two-Step Spin-Coating Method

Effect of Low-Concentration Rb<sup>+</sup> Mixing on Semiconductor Majority Charge Carriers Type of Perovskite Light-Absorption Layer by Using Two-Step Spin-Coating Method

In recent years, perovskite materials have been the subject of great progress in optoelectronic devices. The perovskite layer is the light absorption layer of perovskite solar cells (PSCs), and the majority charge carriers type play a crucial role in the formation of a P–N junction. In this paper, t...

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Main Authors: Baoyu Liu, Xiaoping Zou, Jin Cheng, Tao Ling, Yujun Yao, Dan Chen, Chuangchuang Chang, Xing Yu, Junqi Wang, Zixiao Zhou, Guangdong Li
Format: Article
Language:English
Published: MDPI AG 2020-06-01
Series:Coatings
Subjects:
low concentrations
Rb mixing
majority charge carriers type
two-step
Online Access:https://www.mdpi.com/2079-6412/10/7/627
id doaj-0a1329ad95704a4795ed3c01aa86e2e6
record_format Article
collection DOAJ
language English
format Article
sources DOAJ
author Baoyu Liu
Xiaoping Zou
Jin Cheng
Tao Ling
Yujun Yao
Dan Chen
Chuangchuang Chang
Xing Yu
Junqi Wang
Zixiao Zhou
Guangdong Li
spellingShingle Baoyu Liu
Xiaoping Zou
Jin Cheng
Tao Ling
Yujun Yao
Dan Chen
Chuangchuang Chang
Xing Yu
Junqi Wang
Zixiao Zhou
Guangdong Li
Effect of Low-Concentration Rb<sup>+</sup> Mixing on Semiconductor Majority Charge Carriers Type of Perovskite Light-Absorption Layer by Using Two-Step Spin-Coating Method
Coatings
low concentrations
Rb mixing
majority charge carriers type
two-step
author_facet Baoyu Liu
Xiaoping Zou
Jin Cheng
Tao Ling
Yujun Yao
Dan Chen
Chuangchuang Chang
Xing Yu
Junqi Wang
Zixiao Zhou
Guangdong Li
author_sort Baoyu Liu
title Effect of Low-Concentration Rb<sup>+</sup> Mixing on Semiconductor Majority Charge Carriers Type of Perovskite Light-Absorption Layer by Using Two-Step Spin-Coating Method
title_short Effect of Low-Concentration Rb<sup>+</sup> Mixing on Semiconductor Majority Charge Carriers Type of Perovskite Light-Absorption Layer by Using Two-Step Spin-Coating Method
title_full Effect of Low-Concentration Rb<sup>+</sup> Mixing on Semiconductor Majority Charge Carriers Type of Perovskite Light-Absorption Layer by Using Two-Step Spin-Coating Method
title_fullStr Effect of Low-Concentration Rb<sup>+</sup> Mixing on Semiconductor Majority Charge Carriers Type of Perovskite Light-Absorption Layer by Using Two-Step Spin-Coating Method
title_full_unstemmed Effect of Low-Concentration Rb<sup>+</sup> Mixing on Semiconductor Majority Charge Carriers Type of Perovskite Light-Absorption Layer by Using Two-Step Spin-Coating Method
title_sort effect of low-concentration rb<sup>+</sup> mixing on semiconductor majority charge carriers type of perovskite light-absorption layer by using two-step spin-coating method
publisher MDPI AG
series Coatings
issn 2079-6412
publishDate 2020-06-01
description In recent years, perovskite materials have been the subject of great progress in optoelectronic devices. The perovskite layer is the light absorption layer of perovskite solar cells (PSCs), and the majority charge carriers type play a crucial role in the formation of a P–N junction. In this paper, the light absorption layer of PSCs was Rb-mixed at a low concentrations by using a two-step spin-coating method, which could adjust the majority charge carriers type in perovskite films from N-type to P-type, and it has little influence on the crystal structure and light absorption capacity of perovskite. In addition, low concentration Rb-mixing is different from high concentration Rb-mixing. With increasing Rb-mixing concentration, the perovskite grains does not change shape. Although the quality of perovskite films deteriorated and the PL peaks exhibit a slight blue shift after mixing, the efficiency only slightly decreased, indicating that the new P-N hetero-junction was still formed after mixing, which provided a new idea for the future research of homo-junction PSCs.
topic low concentrations
Rb mixing
majority charge carriers type
two-step
url https://www.mdpi.com/2079-6412/10/7/627
work_keys_str_mv AT baoyuliu effectoflowconcentrationrbsupsupmixingonsemiconductormajoritychargecarrierstypeofperovskitelightabsorptionlayerbyusingtwostepspincoatingmethod
AT xiaopingzou effectoflowconcentrationrbsupsupmixingonsemiconductormajoritychargecarrierstypeofperovskitelightabsorptionlayerbyusingtwostepspincoatingmethod
AT jincheng effectoflowconcentrationrbsupsupmixingonsemiconductormajoritychargecarrierstypeofperovskitelightabsorptionlayerbyusingtwostepspincoatingmethod
AT taoling effectoflowconcentrationrbsupsupmixingonsemiconductormajoritychargecarrierstypeofperovskitelightabsorptionlayerbyusingtwostepspincoatingmethod
AT yujunyao effectoflowconcentrationrbsupsupmixingonsemiconductormajoritychargecarrierstypeofperovskitelightabsorptionlayerbyusingtwostepspincoatingmethod
AT danchen effectoflowconcentrationrbsupsupmixingonsemiconductormajoritychargecarrierstypeofperovskitelightabsorptionlayerbyusingtwostepspincoatingmethod
AT chuangchuangchang effectoflowconcentrationrbsupsupmixingonsemiconductormajoritychargecarrierstypeofperovskitelightabsorptionlayerbyusingtwostepspincoatingmethod
AT xingyu effectoflowconcentrationrbsupsupmixingonsemiconductormajoritychargecarrierstypeofperovskitelightabsorptionlayerbyusingtwostepspincoatingmethod
AT junqiwang effectoflowconcentrationrbsupsupmixingonsemiconductormajoritychargecarrierstypeofperovskitelightabsorptionlayerbyusingtwostepspincoatingmethod
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AT guangdongli effectoflowconcentrationrbsupsupmixingonsemiconductormajoritychargecarrierstypeofperovskitelightabsorptionlayerbyusingtwostepspincoatingmethod
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spelling doaj-0a1329ad95704a4795ed3c01aa86e2e62020-11-25T03:53:24ZengMDPI AGCoatings2079-64122020-06-011062762710.3390/coatings10070627Effect of Low-Concentration Rb<sup>+</sup> Mixing on Semiconductor Majority Charge Carriers Type of Perovskite Light-Absorption Layer by Using Two-Step Spin-Coating MethodBaoyu Liu0Xiaoping Zou1Jin Cheng2Tao Ling3Yujun Yao4Dan Chen5Chuangchuang Chang6Xing Yu7Junqi Wang8Zixiao Zhou9Guangdong Li10Beijing Advanced Innovation Center for Materials Genome Engineering, Research Center for Sensor Technology, Beijing Key Laboratory for Sensor, MOE Key Laboratory for Modern Measurement and Control Technology, School of Applied Sciences, School of Instrument Science and Optoelectronics Engineering, Beijing Information Science and Technology University, Beijing 100101, ChinaBeijing Advanced Innovation Center for Materials Genome Engineering, Research Center for Sensor Technology, Beijing Key Laboratory for Sensor, MOE Key Laboratory for Modern Measurement and Control Technology, School of Applied Sciences, School of Instrument Science and Optoelectronics Engineering, Beijing Information Science and Technology University, Beijing 100101, ChinaBeijing Advanced Innovation Center for Materials Genome Engineering, Research Center for Sensor Technology, Beijing Key Laboratory for Sensor, MOE Key Laboratory for Modern Measurement and Control Technology, School of Applied Sciences, School of Instrument Science and Optoelectronics Engineering, Beijing Information Science and Technology University, Beijing 100101, ChinaBeijing Advanced Innovation Center for Materials Genome Engineering, Research Center for Sensor Technology, Beijing Key Laboratory for Sensor, MOE Key Laboratory for Modern Measurement and Control Technology, School of Applied Sciences, School of Instrument Science and Optoelectronics Engineering, Beijing Information Science and Technology University, Beijing 100101, ChinaBeijing Advanced Innovation Center for Materials Genome Engineering, Research Center for Sensor Technology, Beijing Key Laboratory for Sensor, MOE Key Laboratory for Modern Measurement and Control Technology, School of Applied Sciences, School of Instrument Science and Optoelectronics Engineering, Beijing Information Science and Technology University, Beijing 100101, ChinaState Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, ChinaBeijing Advanced Innovation Center for Materials Genome Engineering, Research Center for Sensor Technology, Beijing Key Laboratory for Sensor, MOE Key Laboratory for Modern Measurement and Control Technology, School of Applied Sciences, School of Instrument Science and Optoelectronics Engineering, Beijing Information Science and Technology University, Beijing 100101, ChinaBeijing Advanced Innovation Center for Materials Genome Engineering, Research Center for Sensor Technology, Beijing Key Laboratory for Sensor, MOE Key Laboratory for Modern Measurement and Control Technology, School of Applied Sciences, School of Instrument Science and Optoelectronics Engineering, Beijing Information Science and Technology University, Beijing 100101, ChinaBeijing Advanced Innovation Center for Materials Genome Engineering, Research Center for Sensor Technology, Beijing Key Laboratory for Sensor, MOE Key Laboratory for Modern Measurement and Control Technology, School of Applied Sciences, School of Instrument Science and Optoelectronics Engineering, Beijing Information Science and Technology University, Beijing 100101, ChinaBeijing Advanced Innovation Center for Materials Genome Engineering, Research Center for Sensor Technology, Beijing Key Laboratory for Sensor, MOE Key Laboratory for Modern Measurement and Control Technology, School of Applied Sciences, School of Instrument Science and Optoelectronics Engineering, Beijing Information Science and Technology University, Beijing 100101, ChinaBeijing Advanced Innovation Center for Materials Genome Engineering, Research Center for Sensor Technology, Beijing Key Laboratory for Sensor, MOE Key Laboratory for Modern Measurement and Control Technology, School of Applied Sciences, School of Instrument Science and Optoelectronics Engineering, Beijing Information Science and Technology University, Beijing 100101, ChinaIn recent years, perovskite materials have been the subject of great progress in optoelectronic devices. The perovskite layer is the light absorption layer of perovskite solar cells (PSCs), and the majority charge carriers type play a crucial role in the formation of a P–N junction. In this paper, the light absorption layer of PSCs was Rb-mixed at a low concentrations by using a two-step spin-coating method, which could adjust the majority charge carriers type in perovskite films from N-type to P-type, and it has little influence on the crystal structure and light absorption capacity of perovskite. In addition, low concentration Rb-mixing is different from high concentration Rb-mixing. With increasing Rb-mixing concentration, the perovskite grains does not change shape. Although the quality of perovskite films deteriorated and the PL peaks exhibit a slight blue shift after mixing, the efficiency only slightly decreased, indicating that the new P-N hetero-junction was still formed after mixing, which provided a new idea for the future research of homo-junction PSCs.https://www.mdpi.com/2079-6412/10/7/627low concentrationsRb mixingmajority charge carriers typetwo-step

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